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浏览/检索结果: 共87条，第1-10条 帮助

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A novel structure to enable low local electric field and high on-state current in GaN photoconductive semiconductor switches 期刊论文  OAI收割
OPTICS COMMUNICATIONS, 2021, 卷号: 497, 页码: 127133
作者:  Shi, Daixing;   Jiang, Lijuan;   Wang, Quan;   Feng, Chun;   Xiao, Hongling;   Li, Wei;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：14/0  |  提交时间：2022/05/19
Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications 期刊论文  OAI收割
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 卷号: 218, 期号: 18, 页码: 2100151
作者:  Jia, Yeting;   Wang, Quan;   Chen, Changxi;   Feng, Chun;   Li, Wei;   Jiang, Lijuan;   Xiao, Hongling;   Wang, Qian;   Xu, Xiangang;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：62/0  |  提交时间：2022/05/19
Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling 期刊论文  OAI收割
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 卷号: 10, 期号: 5, 页码: 55005
作者:  Li, Zhipeng;   Wang, Quan;   Feng, Chun;   Wang, Qian;   Niu, Di;   Jiang, Lijuan;   Li, Wei;   Xiao, Hongling;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：13/0  |  提交时间：2022/07/25
Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism 期刊论文  OAI收割
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 卷号: 218, 期号: 12, 页码: 2000827
作者:  Hu, Haoyue;   Xiao, Hongling;   Guo, Fen;   Wang, Quan;   Feng, Chun;   Jiang, Lijuan;   Wang, Qian;   Liu, Hongxin;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：9/0  |  提交时间：2022/07/26
Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate 期刊论文  OAI收割
JOURNAL OF ELECTRONIC MATERIALS, 2021, 卷号: 50, 期号: 5, 页码: 2630-2636
作者:  Chu, Jiayan;   Wang, Quan;   Jiang, Lijuan;   Feng, Chun;   Li, Wei;   Liu, Hongxin;   Xiao, Hongling;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：13/0  |  提交时间：2022/11/03
A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications 期刊论文  OAI收割
ELECTRONICS, 2021, 卷号: 10, 期号: 3, 页码: 311
作者:  Cheng, Peisen;   Wang, Quan;   Li, Wei;   Jia, Yeting;   Liu, Zhichao;   Feng, Chun;   Jiang, Lijuan;   Xiao, Hongling;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：10/0  |  提交时间：2022/11/03
The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT 期刊论文  OAI收割
MICROMACHINES, 2021, 卷号: 12, 期号: 2, 页码: 131
作者:  Niu, Di;   Wang, Quan;   Li, Wei;   Chen, Changxi;   Xu, Jiankai;   Jiang, Lijuan;   Feng, Chun;   Xiao, Hongling;   Wang, Qian;   Xu, Xiangang;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：10/0  |  提交时间：2022/11/03
Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor 期刊论文  OAI收割
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 11, 页码: 111001
作者:  Di Niu;   Quan Wang;   Wei Li;   Changxi Chen;   Jiankai Xu;   Lijuan Jiang;   Chun Feng;   Hongling Xiao;   Qian Wang;   Xiangang Xu;   Xiaoliang Wang
  |  收藏  |  浏览/下载：33/0  |  提交时间：2021/05/24
Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism 期刊论文  OAI收割
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 卷号: 35, 期号: 9, 页码: 095024
作者:  Fen Guo;   Quan Wang;   Hongling Xiao;   Lijuan Jiang;   Wei Li;   Chun Feng;   Xiaoliang Wang;  Zhanguo Wang
  |  收藏  |  浏览/下载：21/0  |  提交时间：2021/05/25
Comparative Study of SiC Planar MOSFETs With Different p-Body Designs 期刊论文  OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 3, 页码: 1071-1076
作者:  Weijiang Ni ;   Xiaoliang Wang ;   Miaoling Xu ;   Mingshan Li;   Chun Feng;   Hongling Xiao;   Lijuan Jiang;   Wei Li;   Quan Wang
  |  收藏  |  浏览/下载：21/0  |  提交时间：2021/11/05