Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism
文献类型：期刊论文
| 作者 | Fen Guo; Quan Wang; Hongling Xiao; Lijuan Jiang; Wei Li; Chun Feng; Xiaoliang Wang; Zhanguo Wang |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2020 |
| 卷号 | 35期号:9页码:095024 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30149]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Fen Guo; Quan Wang; Hongling Xiao; Lijuan Jiang; Wei Li; Chun Feng; Xiaoliang Wang;Zhanguo Wang. Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2020,35(9):095024. |
| APA | Fen Guo; Quan Wang; Hongling Xiao; Lijuan Jiang; Wei Li; Chun Feng; Xiaoliang Wang;Zhanguo Wang.(2020).Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,35(9),095024. |
| MLA | Fen Guo; Quan Wang; Hongling Xiao; Lijuan Jiang; Wei Li; Chun Feng; Xiaoliang Wang;Zhanguo Wang."Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 35.9(2020):095024. |
入库方式： OAI收割
来源：半导体研究所
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