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Theoretical study on InxGa1-xN/GaN quantum dots solar cell

文献类型：期刊论文

作者Deng, Qingwen1; Wang, Xiaoliang1,2; Yang, Cuibai1,2; Xiao, Hongling1,2; Wang, Cuimei1,2; Yin, Haibo1,2; Hou, Qifeng1; Li, Jinmin1; Wang, Zhanguo2; Hou, Xun
刊名PHYSICA B-CONDENSED MATTER
出版日期2011
卷号406期号:1页码:73-76
关键词Efficiency Quantum dot GaN
ISSN号0921-4526
DOI10.1016/j.physb.2010.10.020
通讯作者Deng, Qingwen(daven@semi.ac.cn)
英文摘要In this work, the structure of InxGa1-xN/GaN quantum dots solar cell is investigated by solving the Schrodinger equation in light of the Kronig-Penney model. Compared to p-n homojunction and heterojunction solar cells, the InxGa1-xN/GaN quantum clots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well. (C) 2010 Elsevier B.V. All rights reserved.
资助项目Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; Key Development Program for Basic Research of China[2006CB604905] ; Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向Physics
语种英语
WOS记录号WOS:000285212200016
出版者ELSEVIER SCIENCE BV
资助机构Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; Key Development Program for Basic Research of China ; Chinese Academy of Sciences
源URL[http://ir.imr.ac.cn/handle/321006/105677]  
专题金属研究所_中国科学院金属研究所
通讯作者Deng, Qingwen
作者单位1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714		 Deng, Qingwen,Wang, Xiaoliang,Yang, Cuibai,et al. Theoretical study on InxGa1-xN/GaN quantum dots solar cell[J]. PHYSICA B-CONDENSED MATTER,2011,406(1):73-76.
APA Deng, Qingwen.,Wang, Xiaoliang.,Yang, Cuibai.,Xiao, Hongling.,Wang, Cuimei.,...&Hou, Xun.(2011).Theoretical study on InxGa1-xN/GaN quantum dots solar cell.PHYSICA B-CONDENSED MATTER,406(1),73-76.
MLA Deng, Qingwen,et al."Theoretical study on InxGa1-xN/GaN quantum dots solar cell".PHYSICA B-CONDENSED MATTER 406.1(2011):73-76.

入库方式： OAI收割

来源：金属研究所

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