Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
文献类型：期刊论文
| 作者 | Hou, Qifeng2; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2,3; Wang, Cuimei1,2,3; Yang, Cuibai1,2,3; Yin, Haibo2; Deng, Qingwen2; Li, Jinmin1,2; Wang, Zhanguo3; Hou, Xun1 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011-03-07 |
| 卷号 | 98期号:10页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3562008 |
| 通讯作者 | Hou, Qifeng(qfhou@semi.ac.cn) |
| 英文摘要 | The influence of electric field on persistent photoconductivity in unintentionally doped n-GaN is investigated. It was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. After a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. It is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the Coulomb-repulsive characteristic of defects related to persistent photoconductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562008] |
| 资助项目 | Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000288277200030 |
| 出版者 | AMER INST PHYSICS |
| 资助机构 | Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences |
| 源URL | [http://ir.imr.ac.cn/handle/321006/105726]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Hou, Qifeng |
| 作者单位 | 1.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hou, Qifeng,Wang, Xiaoliang,Xiao, Hongling,et al. Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN[J]. APPLIED PHYSICS LETTERS,2011,98(10):3. |
| APA | Hou, Qifeng.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Hou, Xun.(2011).Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN.APPLIED PHYSICS LETTERS,98(10),3. |
| MLA | Hou, Qifeng,et al."Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN".APPLIED PHYSICS LETTERS 98.10(2011):3. |
入库方式： OAI收割
来源：金属研究所
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