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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates

文献类型：期刊论文

作者Wei, Meng1; Wang, Xiaoliang1,2; Pan, Xu1; Xiao, Hongling1,2; Wang, Cuimei1,2; Yang, Cuibai1,2; Wang, Zhanguo2
刊名JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
出版日期2011-08-01
卷号22期号:8页码:1028-1032
ISSN号0957-4522
DOI10.1007/s10854-010-0254-0
通讯作者Wei, Meng(mengw@semi.ac.cn)
英文摘要Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed from the optical microscopy and scanning electronic microscopy that the graded AlGaN buffer with optimized thickness had a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed that AlGaN buffer with proper thickness could improve the crystal quality and surface morphology of the GaN film. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer by the insertion of graded AlGaN buffer.
资助项目Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB32 7503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS 2009L02]
WOS研究方向Engineering ; Materials Science ; Physics
语种英语
WOS记录号WOS:000292555200021
出版者SPRINGER
资助机构Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
源URL[http://ir.imr.ac.cn/handle/321006/107125]  
专题金属研究所_中国科学院金属研究所
通讯作者Wei, Meng
作者单位1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714		 Wei, Meng,Wang, Xiaoliang,Pan, Xu,et al. Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2011,22(8):1028-1032.
APA Wei, Meng.,Wang, Xiaoliang.,Pan, Xu.,Xiao, Hongling.,Wang, Cuimei.,...&Wang, Zhanguo.(2011).Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,22(8),1028-1032.
MLA Wei, Meng,et al."Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 22.8(2011):1028-1032.

入库方式： OAI收割

来源：金属研究所

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