Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy
文献类型：期刊论文
| 作者 | Pan, Xu1; Wang, Xiaoliang1,2; Xiao, Hongling1,2; Wang, Cuimei1,2; Yang, Cuibai1,2; Li, Wei2; Wang, Weiying2; Jin, Peng2; Wang, Zhanguo1,2 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2011-08-01 |
| 卷号 | 257期号:20页码:8718-8721 |
| 关键词 | Photoluminescence Raman scattering Pulsed atomic layer epitaxy AlGaN alloys |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2011.05.055 |
| 通讯作者 | Pan, Xu(xpan@semi.ac.cn) |
| 英文摘要 | Al(0.91)Ga(0.09)N epilayers have been obtained by pulsed atomic layer epitaxy (PALE) technique on sapphire (0 0 0 1) substrates. Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy and Raman scattering spectrum have been employed to study the optical transitions in Al(0.91)Ga(0.09)N epilayers. We found the exciton-phonon interaction by fitting the asymmetric PL peak, in which the transverse optical phonon (TO) and the longitudinal optical (LO) phonon are the main contributor. The abnormal S-shaped temperature dependence of the PL band peak is less pronounced or has disappeared. Further analysis shows that there possibly exists a high density of deeper localized state (similar to 90 meV) in Al(0.91)Ga(0.09)N. The formation of these localized states provides a favorable condition for efficient light emission. (C) 2011 Elsevier B.V. All rights reserved. |
| 资助项目 | Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000291725100070 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences |
| 源URL | [http://ir.imr.ac.cn/handle/321006/107185]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Pan, Xu |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Pan, Xu,Wang, Xiaoliang,Xiao, Hongling,et al. Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(20):8718-8721. |
| APA | Pan, Xu.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Wang, Zhanguo.(2011).Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy.APPLIED SURFACE SCIENCE,257(20),8718-8721. |
| MLA | Pan, Xu,et al."Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy".APPLIED SURFACE SCIENCE 257.20(2011):8718-8721. |
入库方式： OAI收割
来源：金属研究所
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