High-performance broadband photodetector with in-situ-grown Bi2Se3 film on micropyramidal Si substrate
文献类型：期刊论文
| 作者 | Hong, Xin1,2; Shen, Jun2 ; Tang, Xinyue2; Xie, Yi2; Su, Min1,2; Tai, Guojun2; Yao, Jing1; Fu, Yichao1; Ji, Junyang1; Liu, Xueqin1
|
| 刊名 | OPTICAL MATERIALS
 |
| 出版日期 | 2021-07-01 |
| 卷号 | 117页码:7 |
| 关键词 | Topological insulator Micropyramidal silicon PVD Heterojunction |
| ISSN号 | 0925-3467 |
| DOI | 10.1016/j.optmat.2021.111118 |
| 通讯作者 | Yang, Jun(jyang@cigit.ac.cn) ; Wei, Dapeng(dpwei@cigit.ac.cn) |
| 英文摘要 | Topological insulators have broad applications in the new generation of electronic devices and optoelectronic devices. Due to its narrow bandgap of 0.3 eV, Bi2Se3 film is a promising material for applications regarding visible light and infrared photodetection. However, the performance of photodetectors based on Bi2Se3 film is usually limited by the low absorption rate and the poor junction quality. In this work, we directly grew Bi2Se3 film onto the micropyramidal silicon by low-cost physical vapor deposition (PVD) method. Due to the light trapping of the micropyramidal substrate, and the high junction quality resulted from in-situ grown interface, the Bi2Se3/Si heterostructure has good photoresponse under broadband laser illumination of wavelengths from 635 to 2700 nm, which includes an excellent photo-to-dark ratio of 1.01 x 104, dark current of 0.11 nA, specific detectivity of 1.24 x 1011 Jones, and a fast response speed of microseconds. The etching process is found to be critical for the improvement of photoresponse. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency heterojunction. |
| 资助项目 | NSFC[61705229] ; Youth Innovation Promotion Association of CAS[2015316] ; Youth Innovation Promotion Association of CAS[2018416] ; Project of Chongqing brain science Collaborative Innovation Center ; Project of CAS Western Young Scholar ; Project of CQ CSTC[cstc2017zdcy-zdyfX0001] ; Project of CQ CSTC[cstc2017zdcy-zdyfX0078] ; Project of Chongqing Science and Technology Bureau[cstc2019jcyj-msxmX0574] ; Project of Chongqing Science and Technology Bureau[cstc2019jscx-msxmX0081] ; Project of Chongqing Science and Technology Bureau[cstc2019jscx-msxmX0024] |
| WOS研究方向 | Materials Science ; Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000687266600004 |
| 出版者 | ELSEVIER |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/14202]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Yang, Jun; Wei, Dapeng |
| 作者单位 | 1.Chongqing Univ Technol, Dept Appl Phys, Chongqing, Peoples R China 2.Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hong, Xin,Shen, Jun,Tang, Xinyue,et al. High-performance broadband photodetector with in-situ-grown Bi2Se3 film on micropyramidal Si substrate[J]. OPTICAL MATERIALS,2021,117:7. |
| APA | Hong, Xin.,Shen, Jun.,Tang, Xinyue.,Xie, Yi.,Su, Min.,...&Wei, Dapeng.(2021).High-performance broadband photodetector with in-situ-grown Bi2Se3 film on micropyramidal Si substrate.OPTICAL MATERIALS,117,7. |
| MLA | Hong, Xin,et al."High-performance broadband photodetector with in-situ-grown Bi2Se3 film on micropyramidal Si substrate".OPTICAL MATERIALS 117(2021):7. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。