Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization
文献类型：期刊论文
| 作者 | Li, Zongzhen1,2; Liu, Jie1 ; Zhai, Pengfei1; Liu, Tianqi1; Bi, Jinshun3; Zhang, Zhenxing4; Zhang, Shengxia1; Hu, Peipei1; Xu, Lijun1,2; Zeng, Jian1
|
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2019-10-01 |
| 卷号 | 40期号:10页码:1634-1637 |
| 关键词 | HfO2 heavy ion irradiation reliability degradation crystallization |
| ISSN号 | 0741-3106 |
| DOI | 10.1109/LED.2019.2939002 |
| 通讯作者 | Liu, Jie(j.liu@impcas.ac.cn) ; Zhai, Pengfei(zhaipengfei@impcas.ac.cn) |
| 英文摘要 | The reliability degradation of HfO2-based devices under heavy ion irradiation is still an open question. In this letter, the ultrathin amorphous HfO2 gate stacks were irradiated by different types of swift heavy ions (SHIs). The fine structure of latent track in amorphous HfO2 is crystalline phase along the particle trajectory. The effects of latent track on the electrical properties were characterized by the high frequency capacitance-voltage (C-V) and the leakage current density-voltage (J-V) measurements. The quantitative relationship between microstructure changes and electrical properties provides a newmethod to estimate the threshold of the electronic energy loss ((dE/dx)(e)) for crystallization and allows for prediction of device sensitivity to SHIs irradiation. |
| WOS关键词 | ELECTRICAL-PROPERTIES ; HAFNIUM OXIDE ; THIN-FILMS ; MICROSTRUCTURE ; INTERFACE ; BREAKDOWN ; GROWTH |
| 资助项目 | National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11405229] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[61634008] ; National Natural Science Foundation of China[11505243] ; CAS Light of West China Program ; Natural Science Foundation of Gansu Province[18JR3RA392] |
| WOS研究方向 | Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000489740400017 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 资助机构 | National Natural Science Foundation of China ; CAS Light of West China Program ; Natural Science Foundation of Gansu Province |
| 源URL | [http://119.78.100.186/handle/113462/141739]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Jie; Zhai, Pengfei |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 4.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Zongzhen,Liu, Jie,Zhai, Pengfei,et al. Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization[J]. IEEE ELECTRON DEVICE LETTERS,2019,40(10):1634-1637. |
| APA | Li, Zongzhen.,Liu, Jie.,Zhai, Pengfei.,Liu, Tianqi.,Bi, Jinshun.,...&Sun, Youmei.(2019).Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization.IEEE ELECTRON DEVICE LETTERS,40(10),1634-1637. |
| MLA | Li, Zongzhen,et al."Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization".IEEE ELECTRON DEVICE LETTERS 40.10(2019):1634-1637. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。