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Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy

文献类型：期刊论文

作者Li, Zongzhen1,2; Liu, Tianqi1; Bi, Jinshun3; Yao, Huijun1,2; Zhang, Zhenxing4; Zhang, Shengxia1; Liu, Jiande1,4; Zhai, Pengfei1,2; Liu, Jie1,2
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2019-11-15
卷号459页码:143-147
ISSN号0168-583X
关键词High-k HfO2 Heavy ion irradiation Reliability Charge trapping Oxygen vacancy
DOI10.1016/j.nimb.2019.09.009
通讯作者Zhai, Pengfei(zhaipengfei@impcas.ac.cn) ; Liu, Jie(j.liu@impcas.ac.cn)
英文摘要The charge trapping effect of HfO2 gate stacks under heavy ion irradiation was evaluated via capacitance-voltage (C-V) measurement and transmission electron microscopy (TEM). Ion irradiation introduced oxygen vacancies into the HfO2 dielectric layer, which located primarily at the interface between HfO2 and Si. The oxygen vacancies act as trapping centers dominating the degradation of device performance after irradiation. The role of the traps on charge trapping in HfO2 gate stacks and the trapped charge stability (i.e. detrapping process) as a function of time were also investigated in this work. The mechanism of how MOS capacitors are affected by irradiation provides a good foundation for future space application of HfO2 gate stacks based integrated circuits.
WOS关键词HFO2 THIN-FILMS ; ELECTRICAL-PROPERTIES ; PROTON IRRADIATION ; RADIATION RESPONSE ; HAFNIUM OXIDE ; SILICON
资助项目National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11405229] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[11505243] ; National Natural Science Foundation of China[61634008] ; CAS Light of West China Program ; Natural Science Foundation of Gansu Province[18JR3RA392]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
出版者ELSEVIER
WOS记录号WOS:000491302700023
资助机构National Natural Science Foundation of China ; CAS Light of West China Program ; Natural Science Foundation of Gansu Province
源URL[http://119.78.100.186/handle/113462/141764]  
专题中国科学院近代物理研究所
通讯作者Zhai, Pengfei; Liu, Jie
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
2.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China
3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
4.Lanzhou Univ, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式
GB/T 7714		 Li, Zongzhen,Liu, Tianqi,Bi, Jinshun,et al. Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2019,459:143-147.
APA Li, Zongzhen.,Liu, Tianqi.,Bi, Jinshun.,Yao, Huijun.,Zhang, Zhenxing.,...&Liu, Jie.(2019).Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,459,143-147.
MLA Li, Zongzhen,et al."Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 459(2019):143-147.

入库方式： OAI收割

来源：近代物理研究所

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