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Research on the oxygen and humidity related-electrical behavior of monolayer MoS2 under vacuum to normal pressures

文献类型：期刊论文

作者Li M(李萌)2,3; Shi HY(石慧瑶)3; Jin, Xiaoshi2; Wang, Lu1; Liu, Xi2; Wu, Meile2
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版日期2021
卷号36期号:9页码:1-5
关键词MoS2 pressure effect electrical properties
ISSN号0268-1242
产权排序1
英文摘要

MoS2; pressure effect; electrical properties

WOS关键词ELECTRONIC-PROPERTIES
资助项目2019 Science Research Fund Project of Liaoning Provincial Department of Education[LQGD2019015] ; 2019 Science Research Fund Project of Liaoning Provincial Department of Education[LJGD2019016] ; 2020 Liaoning Provincial Natural Science Foundation[2020-BS-144] ; China Post-doctoral Science Foundation[2020M680040]
WOS研究方向Engineering ; Materials Science ; Physics
语种英语
WOS记录号WOS:000676027200001
资助机构2019 Science Research Fund Project of Liaoning Provincial Department of Education [LQGD2019015, LJGD2019016] ; 2020 Liaoning Provincial Natural Science Foundation [2020-BS-144] ; China Post-doctoral Science FoundationChina Postdoctoral Science Foundation [2020M680040]
源URL[http://ir.sia.cn/handle/173321/29359]  
专题沈阳自动化研究所_机器人学研究室
通讯作者Wu, Meile
作者单位1.Liaoning equipment manufacturing Vocational and Technical College, Shenyang 110161, China
2.College of Information Science and Engineering, Shenyang University of Technology, Shenyang, China
3.State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang, China
推荐引用方式
GB/T 7714		 Li M,Shi HY,Jin, Xiaoshi,et al. Research on the oxygen and humidity related-electrical behavior of monolayer MoS2 under vacuum to normal pressures[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,36(9):1-5.
APA Li M,Shi HY,Jin, Xiaoshi,Wang, Lu,Liu, Xi,&Wu, Meile.(2021).Research on the oxygen and humidity related-electrical behavior of monolayer MoS2 under vacuum to normal pressures.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,36(9),1-5.
MLA Li M,et al."Research on the oxygen and humidity related-electrical behavior of monolayer MoS2 under vacuum to normal pressures".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36.9(2021):1-5.

入库方式： OAI收割

来源：沈阳自动化研究所

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