Analytic Compact Model of Short-channel Cylindrical ballistic GAA MOSFET Including SDT effect
文献类型：会议论文
| 作者 | Cheng H(程贺)1,2,3 ; Zhang C(张超)1,2,3; Liu TF(刘铁锋)1,2,3; Yang ZJ(杨志家)1,2,3; Zhang ZP(张志鹏)1,2,3
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| 出版日期 | 2020 |
| 会议日期 | April 24-26, 2020 |
| 会议地点 | Zhangjiajie, China |
| 页码 | 1-7 |
| 英文摘要 | We have proposed an analytic compact model describing the drain current characteristics valid in all operating regions, for ultra-short channel cylindrical gate-all-around metal-oxide-semiconductor field-effect transistors considering source-to-drain tunnelling effect. The drain-induced barrier lowering had been incorporated from one two-dimensional analysis in our previous compact model. In this study, to represent the energy level profile along the device channel direction into the Wentzel-Kramers-Brillouin approximation by substituting a parabolic function, we can analytically derive the expressions of the transmission coefficients for source-to-drain tunneling. In the subthreshold region, the source-to-drain tunneling current then can be evaluated using the Landauer formula. Finally, a fully analytic compact model is proposed for representing the drain current in all operating regions. The results compared with non-equilibrium Green’s function transport simulations can be obtained in a good agreement. |
| 产权排序 | 1 |
| 会议录 | 2020 3rd International Conference on Advanced Algorithms and Control Engineering (ICAACE)
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| 会议录出版者 | IOP |
| 会议录出版地 | Bristol, UK |
| 语种 | 英语 |
| ISSN号 | 1742-6588 |
| 源URL | [http://ir.sia.cn/handle/173321/27376]  |
| 专题 | 沈阳自动化研究所_工业控制网络与系统研究室 |
| 通讯作者 | Zhang ZP(张志鹏) |
| 作者单位 | 1.Institutes for Robotics and Intelligent Manufacturing, Chinese Academy of Sciences, Shenyang 110169, China 2.Key Laboratory of Networked Control Systems, Chinese Academy of Sciences, Shenyang 110016, China 3.Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110016, China |
| 推荐引用方式 GB/T 7714 | Cheng H,Zhang C,Liu TF,et al. Analytic Compact Model of Short-channel Cylindrical ballistic GAA MOSFET Including SDT effect[C]. 见:. Zhangjiajie, China. April 24-26, 2020. |
入库方式： OAI收割
来源：沈阳自动化研究所
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