A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design
文献类型：会议论文
| 作者 | Cheng H(程贺)1,2,3 ; Zhang C(张超)1,2,3; Liu TF(刘铁锋)1,2,3; Xie C(谢闯)1,2,3; Yang ZJ(杨志家)1,2,3; Zhang ZP(张志鹏)1,2,3
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| 出版日期 | 2021 |
| 会议日期 | June 4-6, 2021 |
| 会议地点 | Guilin, China |
| 关键词 | ballistic transport compact model integrated-cricuit design sub-7 nm GAA MOSFET the source-drain tunneling |
| 页码 | 351-355 |
| 英文摘要 | One numerical compact model for one-dimensional electron charge density of n-Type silicon ballistic nanowire gate-All-Around metal-oxide-semiconductor field-effect transistors with ultra-short channel incorporating the source-drain tunneling is proposed. When establishing the AC model in practical device applications, compact models describing transient analysis of the carrier behaviors in the device channel are needed. When focusing on the charge density of carriers within GAA MOSFET devices, carriers transporting along the channel direction induced by the source-drain tunneling effect should also be taken into account in the subthreshold region. In this study, transmission coefficients of the source-drain tunneling effect are evaluated through expressing energy level of the lowest subband with bringing in the exact boundary conditions and using the Wentzel-Kramers-Brillouin approximation. Then, the carrier density can be derived from the charge profile in the channel using quantum statistics theory. Finally, comparisons of the calculations of the carrier densities between the source-drain tunneling and the thermionic modes in ballistic transport are demonstrated. |
| 产权排序 | 1 |
| 会议录 | 2021 International Symposium on Computer Technology and Information Science, ISCTIS 2021
 |
| 会议录出版者 | IEEE |
| 会议录出版地 | New York |
| 语种 | 英语 |
| ISBN号 | 978-1-6654-1441-8 |
| 源URL | [http://ir.sia.cn/handle/173321/30312]  |
| 专题 | 沈阳自动化研究所_工业控制网络与系统研究室 |
| 通讯作者 | Cheng H(程贺) |
| 作者单位 | 1.Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang, China 2.Key Laboratory of Networked Control Systems, Chinese Academy of Sciences, Shenyang, China 3.Institutes for Robotics and Intelligent Manufacturing, Chinese Academy of Sciences, Shenyang, China |
| 推荐引用方式 GB/T 7714 | Cheng H,Zhang C,Liu TF,et al. A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design[C]. 见:. Guilin, China. June 4-6, 2021. |
入库方式： OAI收割
来源：沈阳自动化研究所
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