中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth

文献类型:期刊论文

作者Chen, Li; Lin, Wei; Chen, Hangyang; Xu, Houqiang; Guo, Chenyu; Liu, Zhibin; Yan, Jianchang; Sun, Jie; Liu, Huan; Wu, Jason
刊名CRYSTAL GROWTH & DESIGN
出版日期2021
卷号21期号:5页码:2911-2919
关键词SAPPHIRE GROWTH SUPERLATTICES QUALITY ALGAN AIN
英文摘要Semipolar III-nitrides have attracted great attention due to their weak polarization field for optoelectronic devices. High-quality AlN is a perfect template in the epitaxial growth of AlGaN-based ultraviolet optical devices. In this work, (11 (2) over bar2) semipolar AlN was grown on m-plane sapphire by the hierarchical growth mode. A high density of extended defects due to the lattice mismatch and anisotropic growth rate is identified in the as-grown AlN thin film. The influence of thermal annealing and AlN regrowth on the evolution of stacking faults and dislocations in AlN was thoroughly investigated by high-resolution transmission electron microscopy. Extending defects turned into partial dislocations after high-temperature treatment, by which the stacking faults were buried inside the AlN template, incapable of propagating into the AlN regrowth layer. As a result, the AlN regrowth layer exhibits superior crystalline quality. However, compressive strain is found after high-temperature annealing (HTA), which introduces new defects in the AlN regrowth layer. Strain management is demonstrated to be crucial for the quality control of the AlN layer. Overall, high-temperature annealing and regrowth processes proved to be stable and repeatable techniques in the realization of high-efficiency semipolar UV semiconductor devices.
源URL[http://ir.nimte.ac.cn/handle/174433/21939]  
专题中国科学院宁波材料技术与工程研究所
2021专题_期刊论文
作者单位1.Kang, JY (corresponding author), Xiamen Univ, Engn Res Ctr Micronano Optoelect Mat & Devices, Dept Phys,Collaborat Innovat Ctr Optoelect Semico, Minist Educ,Fujian Prov Key Lab Semicond Mat & Ap, Xiamen 361005, Peoples R China.
2.Guo, W
3.Ye, JC (corresponding author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China.
推荐引用方式
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Chen, Li,Lin, Wei,Chen, Hangyang,et al. Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth[J]. CRYSTAL GROWTH & DESIGN,2021,21(5):2911-2919.
APA Chen, Li.,Lin, Wei.,Chen, Hangyang.,Xu, Houqiang.,Guo, Chenyu.,...&Ye, Jichun.(2021).Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth.CRYSTAL GROWTH & DESIGN,21(5),2911-2919.
MLA Chen, Li,et al."Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth".CRYSTAL GROWTH & DESIGN 21.5(2021):2911-2919.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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