Improvement of Passivation Quality by Post-Crystallization Treatments with Different Methods for High Quality Tunnel Oxide Passivated Contact c-Si Solar Cells
文献类型：会议论文
| 作者 | Zhang, Zhi; Zeng, Yuheng; Huang, Yuqing; Guo, Xueqi; Wang, Zhixue; Yang, Qing; Shou, Chunhui; Yan, Baojie; Ye, Jichun |
| 出版日期 | 2019 |
| 会议日期 | JUN 16-21, 2019 |
| 关键词 | SILICON TEMPERATURE |
| 英文摘要 | We report a systematic study of the post-crystallization treatment effects on the passivation quality of tunnel oxide passivated contact (TOPCon) on n-type CZ c-Si wafers with different methods, including thermal annealing in forming gas, and moisture carried by nitrogen, as well as capping with atomic layer deposition (ALD) Al2O3 and plasma-enhanced chemical vapor deposition (PECVD) SiNx:H following a thermal annealing in nitrogen. We found that the annealing at a moderate temperature of similar to 450 degrees C within a mixture of nitrogen and moisture is an effective way for improving the passivation quality, with which a high quality passivation with an implied open circuit voltage (iV(oc)) of 729 mV is achieved. A hydrogen containing capping layer with ALD Al2O3 on the poly-Si contact layer is found to be the most effective way for improving the passivation, with which an outstanding passivation quality with an iV(oc) of 747 mV, effective life time (tau(eff)) of 4.07 ms (Delta n = 5.0x10(15) cm(-3)), and single-side saturated recombination current density (J(0)) of 1.9 fA/cm(2) is attainted. Using the optimized TOPCon passivation layer on solar grade CZ wafers, we achieved a solar cell efficiency of 22.2%. |
| 会议录出版者 | IEEE Photovoltaic Specialists Conference |
| 学科主题 | Energy & Fuels ; Engineering |
| ISSN号 | 0160-8371 |
| ISBN号 | 978-1-7281-0494-2 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/23298]  |
| 专题 | 会议专题 会议专题_会议论文 |
| 推荐引用方式 GB/T 7714 | Zhang, Zhi,Zeng, Yuheng,Huang, Yuqing,et al. Improvement of Passivation Quality by Post-Crystallization Treatments with Different Methods for High Quality Tunnel Oxide Passivated Contact c-Si Solar Cells[C]. 见:. JUN 16-21, 2019. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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