中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Local structural changes induced by ion bombardment in magnetron sputtered ZnO: Al films: Raman, XPS, and XAS study

文献类型:会议论文

作者Meng, Fanping; Ge, Fangfang; Chen, Yuyun; Xu, Genbao; Huang, Feng
出版日期2019
会议日期OCT 17-20, 2017
关键词X-RAY-ABSORPTION ELECTRONIC-STRUCTURE SPECTROSCOPY OXIDE SCATTERING GA
卷号365
DOI10.1016/j.surfcoat.2018.04.013
英文摘要Negative oxygen (O-) ions in the sputter deposition of oxides play a non-negligible role in determining their structures as well as physical properties. Knowledge of bombardment by O- ions induced local disorder in magnetron sputtered ZnO: Al (AZO) films is of fundamental interesting whereas that is currently limited. Here we report our initial results of the local structural changes characterized by a combination of Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and X-ray absorption spectroscopy (XAS). The bombardment conditions during the film deposition was varied through changing the discharge voltage (i.e., vertical bar V-d vertical bar = 80-220 V) and the substrate positions (i.e., center or erosion region of the target). We found that highly-energetic O- ions bombardment induced a coexistence of various point defects such as oxygen vacancies (V-O), oxygen interstitials (O-i), and zinc interstitials (Zn-i). The concentration of these defects and thus the local disorder can be noticeably reduced through decreasing the vertical bar V-d vertical bar down to a sufficient low level. These results can be used to further optimize the growth processes to achieve the ZnO-based and related thin films with a high structural order.
学科主题Materials Science ; Physics
ISSN号0257-8972
源URL[http://ir.nimte.ac.cn/handle/174433/23338]  
专题会议专题
会议专题_会议论文
推荐引用方式
GB/T 7714
Meng, Fanping,Ge, Fangfang,Chen, Yuyun,et al. Local structural changes induced by ion bombardment in magnetron sputtered ZnO: Al films: Raman, XPS, and XAS study[C]. 见:. OCT 17-20, 2017.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。