Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: Significance of controlling defect generation
文献类型：会议论文
| 作者 | Chen, Yuyun; Meng, Fanping; Ge, Fangfang; Xu, Genbao; Huang, Feng |
| 出版日期 | 2018 |
| 会议日期 | OCT 15-18, 2017 |
| 关键词 | SUBSTRATE-TEMPERATURE ELECTRICAL-PROPERTIES RAMAN-SCATTERING AL DEPENDENCE |
| 卷号 | 660 |
| DOI | 10.1016/j.tsf.2018.03.019 |
| 英文摘要 | In magnetron sputtered oxide thin films, both the structure and physical properties are affected by bombardment-induced defects and their annihilation. Ga-doped zinc oxide (GZO) films with low Ga content (similar to 1.7 at.%) were magnetron sputtered at various discharge voltages (70-220 V) and the growth temperatures (130 degrees C and 380 degrees C). The microstructure was characterized by X-ray Diffractometry, Raman Spectroscopy, and Transmission Electron Microscopy. Meanwhile, the electrical and optical properties were measured by Hall-effect measurement and Spectroscopic Ellipsometry, respectively. We found that reducing the discharge voltage led to higher structural quality and better electrical properties, independent of the growth temperature. The benefit, from using a high temperature (i.e., 380 degrees C), of the structural improvement, can only be achieved when the discharge voltage has been decreased to ultralow (i.e., 70 V). Our results suggest that for high quality GZO films deposition, controlling the defect generation should be preferable to simply increasing the growth temperature. |
| 学科主题 | Materials Science ; Physics |
| ISSN号 | 0040-6090 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/23360]  |
| 专题 | 会议专题 会议专题_会议论文 |
| 推荐引用方式 GB/T 7714 | Chen, Yuyun,Meng, Fanping,Ge, Fangfang,et al. Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: Significance of controlling defect generation[C]. 见:. OCT 15-18, 2017. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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