Ga-doped ZnO films by magnetron sputtering at ultralow discharge voltages: Effects of defect annihilation
文献类型：会议论文
| 作者 | Chen, Yuyun; Meng, Fanping; Ge, Fangfang; Huang, Feng |
| 出版日期 | 2017 |
| 会议日期 | APR 24-28, 2017 |
| 关键词 | OXIDE THIN-FILMS MECHANICAL-PROPERTIES ELECTRICAL-PROPERTIES MICROSTRUCTURE ALUMINUM CRYSTALLINITY TRANSMITTANCE TEMPERATURE DEPOSITION GALLIUM |
| 卷号 | 644 |
| DOI | 10.1016/j.tsf.2017.05.055 |
| 英文摘要 | Preparation of high quality transparent conductive oxide (TCO) films by sputter deposition involves an intricate balance of defect generation by the highly energetic negative oxygen ions (depending on the discharge voltage) and the concomitant annihilation of these defects during film growth. Ga-doped ZnO films with a low Ga content (1.7 at.%) were deposited to investigate the effects of defect annihilation on the microstructure evolutions as well as the optical and electrical properties. To achieve this aim, we prepared the GZO films by magnetron sputtering at ultralow discharge voltages (similar to 70 V) to minimize the defect generation, and varied the substrate temperature (from 130 degrees C to 380 degrees C) to adjust the annihilation rates. The microstructure was systematically characterized by X-ray Diffraction (XRD), Transmission Electron Microscopy (TEM), and Raman Spectroscopy. The electrical and optical properties were obtained by a Hall-effect measurement system and Spectroscopic Ellipsometry (SE), respectively. It was found that (i) even under the condition of highly controlled defect generation from the bombardment of negative oxygen ions, a sufficient annihilation of the defects cannot be realized without externally heating the substrate; and (ii) there existed a threshold temperature, above which both the structural quality and the electrical properties were improved with the increased temperature over the temperature range we examined. These results reveal that the growth temperature during the GZO film deposition has played an important role in effective annihilation of the irradiation-induced structural defects, which may be due to the higher diffusion barrier of Ga atoms in our GZO films. (C) 2017 Elsevier B.V. All rights reserved. |
| 学科主题 | Materials Science ; Physics |
| ISSN号 | 0040-6090 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/23400]  |
| 专题 | 会议专题 会议专题_会议论文 |
| 推荐引用方式 GB/T 7714 | Chen, Yuyun,Meng, Fanping,Ge, Fangfang,et al. Ga-doped ZnO films by magnetron sputtering at ultralow discharge voltages: Effects of defect annihilation[C]. 见:. APR 24-28, 2017. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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