Improvement on the Si/PEDOT:PSS hybrid solar cells by rear-sided passivation with SiNx:H layers
文献类型：会议论文
| 作者 | Sun, Yiling; Ye, Jichun; Gao, Pingqi; Xiang, Yong |
| 出版日期 | 2016 |
| 会议日期 | APR 11-12, 2016 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FILMS TEMPERATURE |
| 卷号 | 84 |
| 英文摘要 | A patterned silicon nitride (SiNx:H) passivation layer was employed to improve the performance of silicon/poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) (Si/PEDOT:PSS) hybrid solar cells, achieving of an enhancement in the power conversion efficiency (PCE) of 0.6%. The insertion of patterned SiNx:H layer with a 80% SiNx:H-to-substrate ratio boosted the open circuit voltage (V-oc) from 523.1 mV to 573.4 mV, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma enhanced chemical vapor deposition and lithography processes. |
| 会议录出版者 | AER-Advances in Engineering Research |
| 学科主题 | Engineering |
| ISSN号 | 2352-5401 |
| ISBN号 | 978-94-6252-197-1 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/23403]  |
| 专题 | 会议专题 会议专题_会议论文 |
| 推荐引用方式 GB/T 7714 | Sun, Yiling,Ye, Jichun,Gao, Pingqi,et al. Improvement on the Si/PEDOT:PSS hybrid solar cells by rear-sided passivation with SiNx:H layers[C]. 见:. APR 11-12, 2016. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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