Gradient Oxygen Modulation for Junctionless Electric-Double-Layer IZO-based Synaptic Transistors
文献类型：会议论文
| 作者 | Zhou, Jumei; Wang, Changjin; Wan, Qing |
| 出版日期 | 2014 |
| 会议日期 | MAY 07-10, 2014 |
| 英文摘要 | Junctionless electric-double layer (EDL) transistors with gradient oxygen modulated IZO layers are proposed to emulate the biological synapse. The threshold voltage of the junctionless EDL transistors is shifted from - 0.40 V to 0.48 V as increasing the oxygen partial pressure during IZO deposition. And the estimated energy consumption of an individual excitatory post-synaptic current (EPSC) synaptic process can be reduced when the threshold voltage of the junctionless IZO EDL synaptic transistors are shifted positively. Short-term plasticity (STP) and long-term potentiation (LTP) is also demonstrated in such junctionless IZO-based EDL synaptic transistor. |
| 会议录出版者 | International Symposium on Next-Generation Electronics |
| 学科主题 | Engineering |
| ISSN号 | 2378-8593 |
| ISBN号 | 978-1-4799-4780-5 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/23529]  |
| 专题 | 会议专题 会议专题_会议论文 |
| 推荐引用方式 GB/T 7714 | Zhou, Jumei,Wang, Changjin,Wan, Qing. Gradient Oxygen Modulation for Junctionless Electric-Double-Layer IZO-based Synaptic Transistors[C]. 见:. MAY 07-10, 2014. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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