Self-assembled transparent a-IGZO based TFTs for flexible sensing applications
文献类型：会议论文
| 作者 | Li, Yuanjie; Liu, Yanghui; Yun, Feng; Yang, Yaodong; Wan, Qing |
| 出版日期 | 2014 |
| 会议日期 | AUG 22-24, 2014 |
| 关键词 | PROTON CONDUCTIVITY TRANSISTORS |
| 卷号 | 9233 |
| DOI | 10.1117/12.2068533 |
| 英文摘要 | In this work, transparent amorphous InGaZnO (a-IGZO) thin films have been deposited on quartz glass substrates using RF magnetron sputtering at room temperature at the O-2 flow rate from 0 to 4 sccm. Electrical transport properties and optical transmittance of the a-IGZO films strongly depend on O-2/Ar flow rate ratio. Electrical conductivity of the a-IGZO films dramatically decreases from semiconducting to semi-insulating with increasing the O2 flow rate above 1 sccm. Optical transmittance of the a-IGZO films, however, has been improved up to 85% by increasing O-2 flow rate. Amorphous IGZO-based thin film transistors have been developed on indium-tin-oxide glass substrates with the phosphorus doped nanogranular SiO2 film of similar to 800 nm deposited by plasma-enhanced chemical vapor deposition at room temperature as the gate dielectric layer. The accumulation of protons at the IGZO/SiO2 interface induces a large electric-double-layer capacitance. Enhancement-mode IGZO/SiO2/ITO TFT devices with field effect mobility of 10.5 cm(2)/Vs and low threshold voltage of 0.7 V have been achieved. Furthermore, a-IGZO TFT devices exhibit subthreshold swing of 70 mV/dec and I-on/off of 1.5x10(6). Optical transmission spectra show that the a-IGZO thin film transistors arrays on glass substrates is highly transparent with optical transmittance above 80%. |
| 会议录出版者 | Proceedings of SPIE |
| 学科主题 | Engineering ; Optics |
| ISSN号 | 0277-786X |
| ISBN号 | 978-1-62841-287-1 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/23590]  |
| 专题 | 会议专题 会议专题_会议论文 |
| 推荐引用方式 GB/T 7714 | Li, Yuanjie,Liu, Yanghui,Yun, Feng,et al. Self-assembled transparent a-IGZO based TFTs for flexible sensing applications[C]. 见:. AUG 22-24, 2014. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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