Effect of rapid thermal annealing condition on the structure and conductivity properties of polycrystalline silicon films on glass
文献类型：会议论文
| 作者 | Wang, Weiyan; Huang, Jinhua; Zhang, Xianpeng; Song, Weijie; Tan, Ruiqin |
| 出版日期 | 2011 |
| 会议日期 | SEP 25-28, 2010 |
| 关键词 | SOLID-PHASE CRYSTALLIZATION AMORPHOUS-SILICON SOLAR-CELLS SI FILMS |
| 卷号 | 687 |
| DOI | 10.4028/www.scientific.net/MSF.687.634 |
| 英文摘要 | The effect of rapid thermal annealing (RTA) temperature (700 similar to 1200 degrees C) and time (1 similar to 8 min) on the structure and conductivity properties of polycrystalline silicon (Si) films on glass, grown by RTA crystallization of magnetron sputtering (MS) deposited amorphous Si (a-Si) films, was investigated by means of X-ray diffraction (XRD) and UV reflectance. It was observed the critical temperature for crystallizing a-Si films was similar to 750 degrees C and similar to 700 degrees C based on XRD and reflectance measurements, respectively. As soon as RTA temperature reached and exceeded the critical value, the structural property of polycrystalline Si films increased with RTA temperature or time. The above results were related to the thermal and photon effects induced by RTA. Moreover, it was revealed that the resistivity of polycrystalline Si films decreased with RTA temperature, however, even the resistivity of the polycrystalline Si films annealed at 1200 degrees C was 2 orders of magnitude higher than that of Si target, attributed to the carrier scattering by grain boundaries or defects. The polycrystalline Si films on glass fabricated by MS deposition combined with RTA crystallization may endow them with great application potentials in Si thin-film solar cells. |
| 会议录出版者 | Materials Science Forum |
| 学科主题 | Engineering ; Materials Science ; Physics |
| ISSN号 | 0255-5476 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/23663]  |
| 专题 | 会议专题 会议专题_会议论文 |
| 推荐引用方式 GB/T 7714 | Wang, Weiyan,Huang, Jinhua,Zhang, Xianpeng,et al. Effect of rapid thermal annealing condition on the structure and conductivity properties of polycrystalline silicon films on glass[C]. 见:. SEP 25-28, 2010. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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