Ambipolar SnO thin-film transistors and inverters
文献类型：会议论文
| 作者 | Liang, Lingyan; Cao, Hongtao |
| 出版日期 | 2012 |
| 会议日期 | OCT 08-10, 2012 |
| 关键词 | TFT ELECTRON PHASE |
| 卷号 | 50 |
| 期号 | 8 |
| DOI | 10.1149/05008.0289ecst |
| 英文摘要 | Top-contact and bottom-gate thin-film transistors (TFTs) were fabricated employing polycrystalline SnO films as the channels. The influence of channel thickness, source/drain electrode materials with different work function and post-annealing of the devices on the electrical properties of the TFTs was systematically investigated. Ambipolar TFTs which possesses balanced electron and hole field-effect mobilities were achieved. Complementary metal oxide semiconductor (CMOS) - like inverters using the SnO dual operation transistors were also demonstrated with a gain up to 30. These results also demonstrate that, a simple route in realizing oxide-based ambipolar TFTs and CMOS-like inverters, provides a robust addition to the existing CMOS technology community. |
| 会议录出版者 | ECS Transactions |
| 学科主题 | Electrochemistry ; Engineering ; Materials Science |
| ISSN号 | 1938-5862 |
| ISBN号 | 978-1-60768-356-8 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/23678]  |
| 专题 | 会议专题 会议专题_会议论文 |
| 推荐引用方式 GB/T 7714 | Liang, Lingyan,Cao, Hongtao. Ambipolar SnO thin-film transistors and inverters[C]. 见:. OCT 08-10, 2012. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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