Effect of B2O3 doping on the microstructure and electrical properties of ZnO-based varistors
文献类型：会议论文
| 作者 | Liu, Fenghua; Xu, Gaojie; Duan, Lei; Li, Yali; Cui, Ping |
| 出版日期 | 2008 |
| 会议日期 | MAY 10-13, 2007 |
| 关键词 | ZINC-OXIDE CERAMICS GRAIN-GROWTH MECHANISM BOUNDARY VOLTAGE |
| 卷号 | 368-372 |
| DOI | 10.4028/www.scientific.net/KEM.368-372.497 |
| 英文摘要 | B2O3 doped ZnO-B i(2)O(3)-Sb2O3-based varistors were fabricated by conventional solid state reaction method. The structure and electrical properties were investigated by XRD, SEM and electrical measurements. The grain size obviously increases with increasing B2O3 content, while the content of Zn7Sb2O12 spinel on the grain boundaries gradually decreases, which implies that B2O3 doping inhibits the growth of Zn7Sb2O12 spinel. The density (rho) of ZnO varistors increases with increasing B2O3 content (x) and reaches the maximum at x = 0.4 mol%. The sample with x approximate to 0.6 mol% sintered at 1150 degrees C exhibits the best performance, with nonlinear coefficient of 48 and leakage current of 4 RA. |
| 会议录出版者 | KEY ENGINEERING MATERIALS |
| 学科主题 | Materials Science |
| ISSN号 | 1013-9826 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/23741]  |
| 专题 | 会议专题 会议专题_会议论文 |
| 推荐引用方式 GB/T 7714 | Liu, Fenghua,Xu, Gaojie,Duan, Lei,et al. Effect of B2O3 doping on the microstructure and electrical properties of ZnO-based varistors[C]. 见:. MAY 10-13, 2007. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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