Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs
文献类型：期刊论文
| 作者 | Yang, SH; Zhang, ZG; Lei, ZF; Huang, Y; Xi, K; Wang, SL; Liang, TJ ; Tong, T; Li, XH; Peng, C
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2022 |
| 卷号 | 31期号:12页码:126103 |
| ISSN号 | 1674-1056 |
| 关键词 | neutron fin field-effect transistor (FinFET) single event upset (SEU) Monte-Carlo simulation |
| DOI | 10.1088/1674-1056/ac785a |
| 文献子类 | Article |
| 英文摘要 | Based on the BL09 terminal of China Spallation Neutron Source (CSNS), single event upset (SEU) cross sections of 14 nm fin field-effect transistor (FinFET) and 65 nm quad data rate (QDR) static random-access memories (SRAMs) are obtained under different incident directions of neutrons: front, back and side. It is found that, for both technology nodes, the worst direction corresponds to the case that neutrons traverse package and metallization before reaching the sensitive volume. The SEU cross section under the worst direction is 1.7-4.7 times higher than those under other incident directions. While for multiple-cell upset (MCU) sensitivity, side incidence is the worst direction, with the highest MCU ratio. The largest MCU for the 14 nm FinFET SRAM involves 8 bits. Monte-Carlo simulations are further performed to reveal the characteristics of neutron induced secondary ions and understand the inner mechanisms. |
| 电子版国际标准刊号 | 2058-3834 |
| 语种 | 英语 |
| WOS记录号 | WOS:000889814300001 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/299374]  |
| 专题 | 高能物理研究所_核技术应用研究中心 高能物理研究所_实验物理中心 高能物理研究所_东莞分部 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Yang, SH,Zhang, ZG,Lei, ZF,et al. Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs[J]. CHINESE PHYSICS B,2022,31(12):126103. |
| APA | Yang, SH.,Zhang, ZG.,Lei, ZF.,Huang, Y.,Xi, K.,...&Li, B.(2022).Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs.CHINESE PHYSICS B,31(12),126103. |
| MLA | Yang, SH,et al."Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs".CHINESE PHYSICS B 31.12(2022):126103. |
入库方式： OAI收割
来源：高能物理研究所
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