Effect of Annealing on the Characteristics of Pd/Au Contacts to p-Type GaN/Al0.45Ga0.55N
文献类型：期刊论文
| 作者 | Bai, Y ; Liu, J ; Shen, HJ ; Ma, P ; Liu, XY ; Guo, LW |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2012 |
| 卷号 | 41期号:11页码:3021 |
| 关键词 | OHMIC CONTACTS ALGAN GAN |
| ISSN号 | 0361-5235 |
| 通讯作者 | Bai, Y: Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China. |
| 中文摘要 | The effect of annealing on the characteristics of Pd/Au contacts to p-type GaN/Al0.45Ga0.55N was investigated. The electrical characteristics of Pd/Au contacts and a p-GaN/AlGaN sample were measured after annealing at different temperatures from 550A degrees C to 850A degrees C. Changes in the surface electrical characteristic of p-GaN/AlGaN material were observed after each annealing step. It is indicated that the surface electrical characteristic of p-GaN/AlGaN material plays an important role in the current transport through Pd/Au pads. A possible reason for those changes is impurity contamination, most likely oxygen and carbon contamination introduced from processing. The microstructure of Pd on p-GaN/AlGaN was investigated by glancing-incidence x-ray diffraction (GXRD). The results of GXRD show that the AlPd2 and GaPd2 phases were formed at the interface after annealing, and the formation of these phases could be effective for forming ohmic contacts on p-GaN/AlGaN. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [61006043] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36352]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Bai, Y,Liu, J,Shen, HJ,et al. Effect of Annealing on the Characteristics of Pd/Au Contacts to p-Type GaN/Al0.45Ga0.55N[J]. JOURNAL OF ELECTRONIC MATERIALS,2012,41(11):3021. |
| APA | Bai, Y,Liu, J,Shen, HJ,Ma, P,Liu, XY,&Guo, LW.(2012).Effect of Annealing on the Characteristics of Pd/Au Contacts to p-Type GaN/Al0.45Ga0.55N.JOURNAL OF ELECTRONIC MATERIALS,41(11),3021. |
| MLA | Bai, Y,et al."Effect of Annealing on the Characteristics of Pd/Au Contacts to p-Type GaN/Al0.45Ga0.55N".JOURNAL OF ELECTRONIC MATERIALS 41.11(2012):3021. |
入库方式： OAI收割
来源：物理研究所
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