Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface
文献类型：期刊论文
| 作者 | Bai, Y ; Liu, J ; Ma, P ; Li, B ; Zhu, J ; Guo, LW ; Liu, XY |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2010 |
| 卷号 | 256期号:21页码:6254 |
| 关键词 | N-TYPE GAN ELECTRONIC-PROPERTIES OXIDE DAMAGE INGAN ALGAN |
| ISSN号 | 0169-4332 |
| 通讯作者 | Bai, Y: Chinese Acad Sci, Inst Microelect, Microwave Devices & Integrated Circuits Dept, 3 Bei Tu Cheng W Rd, Beijing 100029, Peoples R China. |
| 中文摘要 | The etching effects on the surface and electrical characteristics of high Al mole fraction AlxGa1-xN(x = 0.65) have been characterized by X-ray photoelectron spectroscopy (XPS) and transfer length method (TLM) as a function of radio frequency power. XPS results show that the Ga-N and Al-N peaks move to the lower energy after ICP etchings. An increase in the amount of oxygen and a decrease in the amount of nitrogen are observed for the etched samples along with the RF power. The annealing at 450 degrees C is partly effective on removing the oxygen amount which would come from the C-O component and recovering the N deficiencies on the surface of etched sample. The extracted sheet resistance of the AlGaN layer from TLM increases gradually after ICP etching with an increase of RF power. The correlation between the XPS peaks and the electrical properties of the etched samples has been discussed and the annealing effect on the inverse leakage current of the p-i-n AlGaN solar blind UV detector is examined. (C) 2010 Elsevier B. V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36543]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Bai, Y,Liu, J,Ma, P,et al. Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface[J]. APPLIED SURFACE SCIENCE,2010,256(21):6254. |
| APA | Bai, Y.,Liu, J.,Ma, P.,Li, B.,Zhu, J.,...&Liu, XY.(2010).Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface.APPLIED SURFACE SCIENCE,256(21),6254. |
| MLA | Bai, Y,et al."Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface".APPLIED SURFACE SCIENCE 256.21(2010):6254. |
入库方式： OAI收割
来源：物理研究所
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