Effect of Zeeman splitting and interlayer bias potential on electron transport in bilayer graphene
文献类型：期刊论文
| 作者 | Zhang, YT ; Xie, XC ; Sun, QF |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2012 |
| 卷号 | 86期号:3 |
| 关键词 | BROKEN-SYMMETRY STATES BERRYS PHASE GRAPHITE |
| ISSN号 | 1098-0121 |
| 通讯作者 | Zhang, YT: Hebei Normal Univ, Coll Phys, Shijiazhuang 050016, Peoples R China. |
| 中文摘要 | Motivated by the recent experiments [Weitz et al., Science 330, 812 (2010) and Kim et al., Phys. Rev. Lett. 107, 016803 (2011)], we present here a theoretical analysis for the Hall resistance, the longitudinal resistance, and the Hall conductance of a six-terminal bilayer graphene Hall bar under a perpendicular magnetic field. The Landauer-Buttiker formalism combined with the nonequilibrium Green function method is applied. In the presence of both the Zeeman splitting and interlayer bias potential U, the spin and valley degeneracies of Landau levels are lifted, which leads to the result that the filling factor. can be an arbitrary integer number and the Hall resistance exhibits a quantum plateau at 1/v(h/e(2)). While v = 0, the system can be in both the spin-polarized and valley-polarized regions. For the valley-polarized v = 0 region, the longitudinal resistance is predicted to have a very large value which means that the system is a quantum Hall insulator even though there are four states in the Fermi surface. However, in the spin-polarized v = 0 region, the system is predicted to display a quantum spin Hall effect, in which the spin-up and spin-down edge states are counterpropagating. In both the spin-polarized and valley-polarized v = 0 regions, the Hall conductances show zero quantum plateaus, although the Hall resistances are very different. In addition, due to the counterpropagating edge states, the longitudinal resistance exhibits some fractional quantum plateaus with values 2/9(h/e(2)), 1/4(h/e(2)), 1/2(h/e(2)), etc. |
| 收录类别 | SCI |
| 资助信息 | NBRP of China [2012CB921303, 2009CB929103]; Natural Science Foundation of Hebei Province of China [A2010000339, A2012205071]; NSF-China [10647126, 10974236]; MOST of China |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/36632]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, YT,Xie, XC,Sun, QF. Effect of Zeeman splitting and interlayer bias potential on electron transport in bilayer graphene[J]. PHYSICAL REVIEW B,2012,86(3). |
| APA | Zhang, YT,Xie, XC,&Sun, QF.(2012).Effect of Zeeman splitting and interlayer bias potential on electron transport in bilayer graphene.PHYSICAL REVIEW B,86(3). |
| MLA | Zhang, YT,et al."Effect of Zeeman splitting and interlayer bias potential on electron transport in bilayer graphene".PHYSICAL REVIEW B 86.3(2012). |
入库方式： OAI收割
来源：物理研究所
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