Growth and Characteristics of Epitaxial AlxGa1-xN by MOCVD
文献类型：期刊论文
| 作者 | Zhang, J ; Guo, LW ; Chen, Y ; Xu, PQ ; Ding, GJ ; Peng, MZ ; Jia, HQ ; Zhou, JM ; Chen, H |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:6 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION LIGHT-EMITTING-DIODES HIGH AL CONTENT OPTICAL-PROPERTIES PHASE EPITAXY ALGAN TEMPERATURE ALLOYS FILMS EPILAYERS |
| ISSN号 | 0256-307X |
| 通讯作者 | Guo, LW: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | AlxGa1-xN epilayers with a wide Al composition range (0.2 <= x <= 0.68) were grown on AlN/sapphire templates by low-pressure metalorganic chemical vapour deposition (LP-MOCVD). X-ray diffraction results reveal that both the (0002) and (10 (1) over bar5) full widths at half-maximum (FWHM) of the AlxGa1-xN epilayer decrease with increasing Al composition due to the smaller lattice mismatch to the AlN template. However, the surface morphology becomes rougher with increasing Al composition due to the weak migration ability of Al atoms. Low temperature photoluminescence (PL) spectra show pronounced near band edge (NBE) emission and the NBE FWHM becomes broader with increasing Al composition mainly caused by alloy disorder. Meanwhile, possible causes of the low energy peaks in the PL spectra are discussed. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10574148]; National High-Tech Research and Development Programme of China [2006AA03A106, 2006AA03A107]; National Basic Research Program of China [2006CB921300]; National Synchrotron Radiation Laboratory |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38868]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, J,Guo, LW,Chen, Y,et al. Growth and Characteristics of Epitaxial AlxGa1-xN by MOCVD[J]. CHINESE PHYSICS LETTERS,2009,26(6). |
| APA | Zhang, J.,Guo, LW.,Chen, Y.,Xu, PQ.,Ding, GJ.,...&Chen, H.(2009).Growth and Characteristics of Epitaxial AlxGa1-xN by MOCVD.CHINESE PHYSICS LETTERS,26(6). |
| MLA | Zhang, J,et al."Growth and Characteristics of Epitaxial AlxGa1-xN by MOCVD".CHINESE PHYSICS LETTERS 26.6(2009). |
入库方式： OAI收割
来源：物理研究所
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