A disorder induced field effect transistor in bilayer and trilayer graphene
文献类型：期刊论文
| 作者 | Xu, DW ; Liu, HW ; Sacksteder, V ; Song, JT ; Jiang, H ; Sun, QF ; Xie, XC |
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 2013 |
| 卷号 | 25期号:10 |
| ISSN号 | 0953-8984 |
| 通讯作者 | Jiang, H (reprint author), Soochow Univ, Dept Phys, Suzhou 215006, Peoples R China. |
| 中文摘要 | We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene and gapped bilayer graphene. |
| 资助信息 | NBRP of China [2012CB921303, 2009CB929100]; NSF-China [10821403, 10974236, 11074174, 11274032]; China Post-Doctoral Science Foundation [2012M520099]; US-DOE [DE-FG02-04ER46124] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56715]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, DW,Liu, HW,Sacksteder, V,et al. A disorder induced field effect transistor in bilayer and trilayer graphene[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2013,25(10). |
| APA | Xu, DW.,Liu, HW.,Sacksteder, V.,Song, JT.,Jiang, H.,...&Xie, XC.(2013).A disorder induced field effect transistor in bilayer and trilayer graphene.JOURNAL OF PHYSICS-CONDENSED MATTER,25(10). |
| MLA | Xu, DW,et al."A disorder induced field effect transistor in bilayer and trilayer graphene".JOURNAL OF PHYSICS-CONDENSED MATTER 25.10(2013). |
入库方式： OAI收割
来源：物理研究所
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