A theoretical estimation model of response speed for photovoltaic HgCdTe infrared detectors
文献类型：会议论文
| 作者 | Wang X(王霄); Shi ZL(史泽林)
|
| 出版日期 | 2014 |
| 会议名称 | International Symposium on Optoelectronic Technology and Application 2014 |
| 会议日期 | May 13-15, 2014 |
| 会议地点 | Beijing, China |
| 关键词 | Doping concentration (DP) photovoltaic HgCdTe infrared photodetector Response speed (RS) Detectivity |
| 页码 | 1-7 |
| 中文摘要 | Doping concentration is the key factor affecting the performance of infrared detectors. Based on photovoltaic HgCdTe infrared photodetectors, in order to compute the response speed in engineering applications precisely and fastly, a theoretical estimation model is proposed. At first, according to continuity equation of PN junctions that are radiated by infrared radiation, the mechanism of PN junctions in a typical working situation is analyzed and an approximate solving method is established, which shows the analytic expression of the relationship between the response speed of photovoltaic infrared photodetectors and the doping concentration s. Then the response speed of photovoltaic HgCdTe infrared photodetectors is compared to that of photoconductive photodetectors. In the end, the error of the estimation model is checked, which is done through numerical analysis. The results indicate that the response speed rises with the doping concentration increasing as the error increases, the estimation model proposed brings the maximum error of 5.9%, if the doping concentration is 1021 per cubic centimeter. |
| 收录类别 | EI ; CPCI（ISTP） |
| 产权排序 | 1 |
| 会议录 | Proc. Of SPIE 9301, International Symposium on Optoelectronic Technology and Application
 |
| 会议录出版者 | SPIE |
| 会议录出版地 | Bellingham, WA |
| 语种 | 英语 |
| ISSN号 | 0277-786X |
| WOS记录号 | WOS:000349371300061 |
| 源URL | [http://ir.sia.cn/handle/173321/15328]  |
| 专题 | 沈阳自动化研究所_光电信息技术研究室 |
| 推荐引用方式 GB/T 7714 | Wang X,Shi ZL. A theoretical estimation model of response speed for photovoltaic HgCdTe infrared detectors[C]. 见:International Symposium on Optoelectronic Technology and Application 2014. Beijing, China. May 13-15, 2014. |
入库方式： OAI收割
来源：沈阳自动化研究所
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