Coexistence and decoupling of bulk and edge states in disordered two-dimensional topological insulators
文献类型：期刊论文
| ; | |
| 作者 | Zhang, YY; Shen, M; An, XT; Sun, QF; Xie, XC; Chang, K; Li, SS |
| 刊名 | physical review b
 ; PHYSICAL REVIEW B
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 90期号:5页码:054205 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26231]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhang, YY,Shen, M,An, XT,et al. Coexistence and decoupling of bulk and edge states in disordered two-dimensional topological insulators, Coexistence and decoupling of bulk and edge states in disordered two-dimensional topological insulators[J]. physical review b, PHYSICAL REVIEW B,2014, 2014,90, 90(5):054205, 054205. |
| APA | Zhang, YY.,Shen, M.,An, XT.,Sun, QF.,Xie, XC.,...&Li, SS.(2014).Coexistence and decoupling of bulk and edge states in disordered two-dimensional topological insulators.physical review b,90(5),054205. |
| MLA | Zhang, YY,et al."Coexistence and decoupling of bulk and edge states in disordered two-dimensional topological insulators".physical review b 90.5(2014):054205. |
入库方式： OAI收割
来源：半导体研究所
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