Band inversion in half Heusler-type Na1-xCsxAlGe(0 <= x <= 1)
文献类型：期刊论文
| 作者 | Wang, XT ; Dai, XF ; Jia, HY ; Wang, LY ; Zhang, XM ; Cui, YT ; Wang, WH ; Wu, GH ; Liu, GD |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2014 |
| 卷号 | 63期号:5 |
| ISSN号 | 1000-3290 |
| 关键词 | first-principles calculations topological insulator half Heusler compound electronic structure |
| 通讯作者 | Liu, GD (reprint author), Chongqing Normal Univ, Sch Phys & Elect Engn, Chongqing 400044, Peoples R China. |
| 中文摘要 | The influences of doping whit congeners on the band topology in half Heusler-type of NaAlGe alloys are investigated using the first-principles calculations. It is found that the Na1-xCsxAlGe alloys with a normal band order are converted into topological nontrivial phases when x is up to 0.125. We argue that it is the degree of hybridization between Al and Ge determine the band order at the Fermi level. The Na or Cs only plays a role of the valence electron contributor and influences the lattice parameter. |
| 资助信息 | National Natural Science Foundation of China [51271071, 11074160]; Ministry of Education Program for New Century Excellent Talents of China [NCET-10-0126]; 100 Excellent Innovative Talents Program of Hebei Province; Henan Province Science and Technology Research Project [102102210037] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/58814]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, XT,Dai, XF,Jia, HY,et al. Band inversion in half Heusler-type Na1-xCsxAlGe(0 <= x <= 1)[J]. ACTA PHYSICA SINICA,2014,63(5). |
| APA | Wang, XT.,Dai, XF.,Jia, HY.,Wang, LY.,Zhang, XM.,...&Liu, GD.(2014).Band inversion in half Heusler-type Na1-xCsxAlGe(0 <= x <= 1).ACTA PHYSICA SINICA,63(5). |
| MLA | Wang, XT,et al."Band inversion in half Heusler-type Na1-xCsxAlGe(0 <= x <= 1)".ACTA PHYSICA SINICA 63.5(2014). |
入库方式： OAI收割
来源：物理研究所
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