中国科学院机构知识库网格系统: 检索

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	Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文 OAI收割 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 Huang CJ; Zuo YH; Li C; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM 收藏 \| 浏览/下载：11/0 \| 提交时间：2010/10/29 Ge/Si islands quantum dot band alignment PL SI/SI1-XGEX QUANTUM-WELLS STRANSKI-KRASTANOV GROWTH II BAND ALIGNMENT GE ISLANDS TEMPERATURE-DEPENDENCE PHOTOLUMINESCENCE LAYERS LUMINESCENCE ORGANIZATION MECHANISM
	Photoluminescence from carbon nanotubes 会议论文 OAI收割 25th international conference on the physics of semiconductors (icps25), osaka, japan, sep 17-22, 2000 Han HX; Li GH; Ge WK; Wang ZP; Xu ZY; Xie SS; Chang BH; Sun LF; Wang BS; Xu G; Su ZB 收藏 \| 浏览/下载：13/0 \| 提交时间：2010/10/29 ELECTRONIC-STRUCTURE
	Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文 OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH 收藏 \| 浏览/下载：10/0 \| 提交时间：2010/11/15 characterization defects X-ray diffraction molecular beam epitaxy nitrides GAAS
	1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors 会议论文 OAI收割 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 作者: Xu YQ 收藏 \| 浏览/下载：16/0 \| 提交时间：2010/10/29 OPERATION
	Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文 OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Pan Z; Li LH; Zhang W; Wang XU; Lin YW; Wu RH 收藏 \| 浏览/下载：13/0 \| 提交时间：2010/11/15 adsorption characterization radiation molecular beam epitaxy nitrides SURFACE-EMITTING LASER QUANTUM-WELLS OPERATION RANGE