中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [5]
采集方式
OAI收割 [5]
内容类型
期刊论文 [5]
发表日期
2011 [5]
学科主题
半导体物理 [5]
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发表日期:2011
学科主题:半导体物理
内容类型:期刊论文
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Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen
期刊论文
OAI收割
journal of physics and chemistry of solids, Journal of Physics and Chemistry of Solids, 2011, 2011, 卷号: 72, 72, 期号: 6, 页码: 725-729, 725-729
作者:
Gai, Yanqin
;
Tang, Gang
;
Li, Jingbo
;
Gai, Y.(yqgai@semi.ac.cn)
  |  
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2012/06/14
Activation energy
Binding energy
Calculations
Complexation
Doping(additives)
Electronic structure
Zinc
Zinc oxide
Activation Energy
Binding Energy
Calculations
Complexation
Doping(Additives)
Electronic Structure
Zinc
Zinc Oxide
Tuning Electron Spin States in Quantum Dots by Spin-Orbit Interactions
期刊论文
OAI收割
chinese physics letters, CHINESE PHYSICS LETTERS, 2011, 2011, 卷号: 28, 28, 期号: 6, 页码: article no.67303, Article no.67303
作者:
Liu Y
;
Cheng F
;
Liu, Y, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. yuliu@semi.ac.cn
  |  
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2011/07/05
ARTIFICIAL ATOMS
RESONANCE
MEMORY
LAYERS
WELLS
GATE
Artificial Atoms
Resonance
Memory
Layers
Wells
Gate
Surface alloy formation of noble adatoms adsorbed on Si(111)-root 3 x root 3-Pb surface: a first-principles study
期刊论文
OAI收割
journal of physics-condensed matter, JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 2011, 卷号: 23, 23, 期号: 26, 页码: art. no. 265001, Art. No. 265001
作者:
Li C
;
Wang F
;
Sun Q
;
Jia Y
  |  
收藏
  |  
浏览/下载:89/7
  |  
提交时间:2011/07/07
SCANNING-TUNNELING-MICROSCOPY
Scanning-tunneling-microscopy
Lead Monolayers
LEAD MONOLAYERS
Tuning of anisotropy in two-electron quantum dots by spin-orbit interactions
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 99, 99, 期号: 3, 页码: 32102, 32102
作者:
Liu Y
;
Cheng F
;
Li XJ
;
Peeters FM
;
Chang K
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收藏
  |  
浏览/下载:19/0
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提交时间:2012/01/06
ARTIFICIAL ATOMS
Artificial Atoms
First-principles study of magnetic properties in Mo-doped graphene
期刊论文
OAI收割
journal of physics-condensed matter, JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 2011, 卷号: 23, 23, 期号: 34, 页码: 346001, 346001
作者:
Kang J
;
Deng HX
;
Li SS
;
Li JB
;
Li, SSLi, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2011/09/14
1ST PRINCIPLES
METAL ATOMS
1st Principles
Metal Atoms