中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2013 [2]
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  • 光电子学 [2]
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0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers 期刊论文  OAI收割
chinese physics b, 2013, 卷号: 22, 期号: 2, 页码: 026802
Ji Lian; Lu Shu-Long; Jiang De-Sheng; Zhao Yong-Ming; Tan Ming; Zhu Ya-Qi; Dong Jian-Rong
收藏  |  浏览/下载:14/0  |  提交时间:2013/09/22
Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文  OAI收割
ieee transactions on electron devices, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai); Cheng, Buwen; Yeo, Yee-Chia
收藏  |  浏览/下载:20/0  |  提交时间:2013/08/27