机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 会议论文 [6]

发表日期

• 2005 [2]
• 2002 [1]
• 2001 [2]
• 2000 [1]

学科主题

• 光电子学 [6]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：光电子学    内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V 会议论文  OAI收割 conference on optoelectronic materials and devices for optical communications, shanghai, peoples r china, nov 07-10, 2005 Zhang, SJ; Wen, JM; Song, HP; Zhu, NH 收藏  |  浏览/下载：85/26  |  提交时间：2010/03/29 semiconductor laser diode  subtraction method  scattering parameters  intrinsic response  thermal effect  FREQUENCY-RESPONSE   Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F 会议论文  OAI收割 conference on optoelectronic materials and devices for optical communications, shanghai, peoples r china, nov 07-10, 2005 Xu Y; Li YZ; Song GF; Gan QQ; Cao Q; Guo L; Chen LH 收藏  |  浏览/下载：108/26  |  提交时间：2010/03/29 AIGaInP laser diodes   Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文  OAI收割 symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Cheng BW; Zhang JG; Zuo YH; Mao RW; Huang CJ; Luo LP; Yao F; Wang QM 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 SI-GE ALLOYS  GROWTH  LAYERS   Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文  OAI收割 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 Huang CJ; Zuo YH; Li C; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 Ge/Si islands  quantum dot  band alignment  PL  SI/SI1-XGEX QUANTUM-WELLS  STRANSKI-KRASTANOV GROWTH  II BAND ALIGNMENT  GE ISLANDS  TEMPERATURE-DEPENDENCE  PHOTOLUMINESCENCE  LAYERS  LUMINESCENCE  ORGANIZATION  MECHANISM   Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Pan Z; Li LH; Zhang W; Wang XU; Lin YW; Wu RH 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 adsorption  characterization  radiation  molecular beam epitaxy  nitrides  SURFACE-EMITTING LASER  QUANTUM-WELLS  OPERATION  RANGE   Cooperative spontaneous emission of excitons in the semiconductor microcavity 会议论文  OAI收割 conference on vertical-cavity surface-emitting lasers iv, san jose, ca, jan 26-28, 2000 Liu S; Lin SM; Wang QM 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 spontaneous emission  microcavity anisotropy  polarized exciton  SURFACE-EMITTING LASERS  POLARITON PHOTOLUMINESCENCE  CAVITY  OPERATION