中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [19]
采集方式
OAI收割 [19]
内容类型
期刊论文 [19]
发表日期
2011 [5]
2010 [3]
2009 [1]
2008 [2]
2006 [5]
2005 [1]
更多
学科主题
光电子学 [19]
筛选
浏览/检索结果:
共19条,第1-10条
帮助
限定条件
学科主题:光电子学
内容类型:期刊论文
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
发表日期升序
发表日期降序
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure
期刊论文
OAI收割
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:
Xue CL
收藏
  |  
浏览/下载:63/4
  |  
提交时间:2011/07/05
Multilayers
Inorganic compounds
Sputtering
Optical properties
DOPED SI/SIO2 SUPERLATTICES
ERBIUM SILICATE
ER3+
LUMINESCENCE
FILMS
PHOTOLUMINESCENCE
Omnidirectional absorption enhancement in hybrid waveguide-plasmon system
期刊论文
OAI收割
applied physics letters, 2011, 卷号: 98, 期号: 26, 页码: 261101
Zhang J
;
Bai WL
;
Cai LK
;
Chen X
;
Song GF
;
Gan QQ
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/02/06
ARRAYS
FILMS
LIGHT
Investigation of flexible electrodes modified by TiN, Pt black and IrO (x)
期刊论文
OAI收割
science china-technological sciences, 2011, 卷号: 54, 期号: 9, 页码: 2305-2309
Li XQ
;
Pei WH
;
Tang RY
;
Gui Q
;
Guo K
;
Wang Y
;
Chen HD
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2011/09/14
IRIDIUM OXIDE
STIMULATION
INTERFACES
SYSTEM
FILMS
ARRAY
A new method to measure the carrier concentration of p-GaN
期刊论文
OAI收割
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M
;
Zhao DG
收藏
  |  
浏览/下载:66/7
  |  
提交时间:2011/07/05
p-GaN
carrier concentration measurement
ultraviolet photodetector
LASER-DIODES
FILMS
Coupled-mode characteristics of coupled-microdisks and single microdisk cavity with an output waveguide
期刊论文
OAI收割
guangxue xuebao/acta optica sinica, Guangxue Xuebao/Acta Optica Sinica, 2011, 2011, 卷号: 31, 31, 期号: 1, 页码: 106006, 106006
作者:
Wang, Jiaxian
;
Li, Junjie
;
Wu, Wenguang
;
Huang, Yongzhen,
;
Wang, J.(wangjx@hqu.edu.cn)
  |  
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2012/06/14
Angular distribution
Finite difference time domain method
Optical resonators
Optoelectronic devices
Refractive index
Waveguides
Angular Distribution
Finite Difference Time Domain Method
Optical Resonators
Optoelectronic Devices
Refractive Index
Waveguides
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun)
;
Zhu JJ (Zhu Jian-Jun)
;
Jiang DS (Jiang De-Sheng)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:110/2
  |  
提交时间:2010/04/22
metalorganic chemical vapor deposition
Al1-xInxN
gradual variation in composition
optical reflectance spectra
X-RAY-DIFFRACTION
PHASE EPITAXY
RELAXATION
FILMS
HETEROSTRUCTURES
SEPARATION
DYNAMICS
ALLOYS
REGION
LAYERS
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector
期刊论文
OAI收割
: journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
作者:
Zhu JJ
;
Yang H
;
Yang H
;
Zhao DG
;
Zhang SM
收藏
  |  
浏览/下载:231/10
  |  
提交时间:2010/04/13
Nitride materials
Photoconductivity and photovoltaics
Computer simulations
FILMS
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang)
;
Zhang S (Zhang Shuang)
;
Liu WB (Liu Wen-Bao)
;
Hao XP (Hao Xiao-Peng)
;
Jiang DS (Jiang De-Sheng)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Wang H (Wang Hui)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
;
Wei L (Wei Long)
收藏
  |  
浏览/下载:73/2
  |  
提交时间:2010/05/24
Ga vacancies
MOCVD
GaN
Schottky barrier photodetector
REVERSE-BIAS LEAKAGE
MOLECULAR-BEAM EPITAXY
P-N-JUNCTIONS
POSITRON-ANNIHILATION
DIODES
FILMS
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
期刊论文
OAI收割
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:
Yang H
;
Jiang DS
;
Zhao DG
;
Zhang SM
;
Yang H
收藏
  |  
浏览/下载:88/41
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
ELECTRON-TRANSPORT
BAND-GAP
FILMS
SAPPHIRE
Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements
期刊论文
OAI收割
journal of applied physics, 2008, 卷号: 103, 期号: 8, 页码: art. no. 083121
Liu, HY
;
Meng, ZM
;
Dai, QF
;
Wu, LJ
;
Guo, Q
;
Hu, W
;
Liu, SH
;
Lan, S
;
Yang, T
收藏
  |  
浏览/下载:52/3
  |  
提交时间:2010/03/08
ENERGY RELAXATION
ELECTRON RELAXATION
CAPTURE
PHONON
INAS
GAAS
TEMPERATURE
DEPENDENCE
DENSITY
TIME