机构

• 长春光学精密机械与物... [4]

采集方式

• OAI收割 [4]

内容类型

• 会议论文 [4]

发表日期

• 2009 [1]
• 2007 [1]
• 2005 [2]

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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 存缴方式：oaiharvest    内容类型：会议论文    专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Assessment of surface roughness by use of soft x-ray scattering (EI CONFERENCE) 会议论文  OAI收割 Soft X-Ray Lasers and Applications VIII, August 4, 2009 - August 6, 2009, San Diego, CA, United states Yan-li M.; Yong-gang W.; Shu-yan C.; Bo C. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 A soft x-ray reflectometer with laser produced plasma source has been designed  which can work from wavelength 8nm to 30 nm and has high performance. Using the soft x-ray reflectometer above  the scattering light distribution of silicon and zerodur mirrors which have super-smooth surfaces could be measured at different incidence angle and different wavelength. The measurement when the incidence angle is 2 degree and the wavelength is 1 lnm has been given in this paper. A surface scattering theory of soft x-ray grazing incidence optics based on linear system theory and an inverse scattering mathematical model is introduced. The vector scattering theory of soft x-ray scattering also is stated in detail. The scattering data are analyzed by both the methods above respectively to give information about the surface profiles. On the other hand  both the two samples are measured by WYKO surface profiler  and the surface roughness of the silicon and zerodur mirror is 1.3 nm and 1.5nm respectively. The calculated results are in quantitative agreement with those measured by WYKO surface profiler  which indicates that soft x-ray scattering is a very useful tool for the evaluation of highly polished surfaces. But there still some difference among the results of different theory and WYKO  and the possible reasons of such difference have been discussed in detail. 2009 SPIE.   Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 Pulsed anodic oxidation technique  a new way of forming current blocking layers  was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer  which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.   Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.   Study of dynamic response on a MOEMS 22 optical switch (EI CONFERENCE) 会议论文  OAI收割 Optical Transmission, Switching, and Subsystems II, November 9, 2004 - November 11, 2004, Beijing, China 作者:  Wang G.;  Chen W. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 The MOEMS 22 optical switch with slant lower electrode and with torsion beam on silicon is designed and analyzed theoretically. Analytical formulae for the squeeze film damping coefficient and the squeeze film damping moment on the cantilever beam of the optical switch are derived. Based on the torsion dynamics theory  the technique and relative results are presented for analyzing the actuating voltage and the switch time. The optimized result of parameters is as: length  width and thickness of the torsion beam are 700  12 and 10 m  length and width of the cantilever beam are 1900 and 1000 m  length and width of the balance beam are 100 and 1000 m  shortest spacing between the upper and lower electrodes is 0.05 m  and highness of the lower electrode is 55 m  respectively. The actuating voltage is less than 10 V  and the switching time of Ton and Toff are 1.30ms and 1.25ms  respectively. The computed results show that the air squeeze film damping is an important factor for the study of dynamic response on MOEMS optical switch.