中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2013 [2]
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  • 光电子学 [2]
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Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN 期刊论文  OAI收割
semiconductor science and technology, Semiconductor Science and Technology, 2013, 2013, 卷号: 28, 28, 期号: 10, 页码: 105020, 105020
作者:  
L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang
  |  收藏  |  浏览/下载:11/0  |  提交时间:2014/04/09
Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文  OAI收割
journal of applied physics, Journal of Applied Physics, 2013, 2013, 卷号: 114, 114, 期号: 14, 页码: 143706, 143706
作者:  
Le, L. C.;  Zhao, D. G.;  Jiang, D. S.;  Li, L.;  Wu, L. L.
  |  收藏  |  浏览/下载:11/0  |  提交时间:2014/04/09