机构

• 半导体研究所 [5]

采集方式

• OAI收割 [5]

内容类型

• 会议论文 [5]

发表日期

• 2011 [1]
• 2008 [1]
• 2006 [1]
• 2000 [2]

学科主题

• 半导体材料 [5]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Single-mode operation of terahertz quantum cascade lasers 会议论文  OAI收割 international symposium on photoelectronic detection and imaging 2011 - terahertz wave technologies and applications, beijing, peoples r china, 2011 Chen JY (Chen J. Y.); Liu JQ (Liu J. Q.); Liu FQ (Liu F. Q.); Li L (Li L.); Wang LJ (Wang L. J.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：20/0  |  提交时间：2011/12/13 High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Yan, JC; Wang, JX; Liu, Z; Liu, NX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 DIODES   Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文  OAI收割 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP 收藏  |  浏览/下载：222/40  |  提交时间：2010/03/29 surface morphology   Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文  OAI收割 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 GaNAs  DC active N-2 plasma  molecular beam epitaxy  nitrogen content  Fourier transform infrared spectroscopy of intensity  BAND-GAP ENERGY  GAAS1-XNX  NITROGEN   GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy 会议论文  OAI收割 conference on optoelectronic and microelectronic materials and devices, bundoora, australia, dec 06-08, 2000 Pan Z; Li LH; Wang XY; Lin YW 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 会议主办方: LA TROBE UNIV, DEPTS ELECTR ENGN & PHYS  OPERATION