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CAS IR Grid
机构
长春光学精密机械与物... [2]
力学研究所 [1]
宁波材料技术与工程研... [1]
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OAI收割 [4]
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会议论文 [4]
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2016 [1]
2012 [1]
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Propagation modes of 3D scour below a submarine pipeline in oblique steady currents and waves
会议论文
OAI收割
8th International Conference on Scour and Erosion, ICSE 2016, Oxford, United kingdom, September 12, 2016 - September 15, 2016
作者:
Zang ZP(臧志鹏)
;
Tang G
;
Cheng L
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2017/05/05
Critical condition
Embedment depth
Incident angles
Local scour
Oblique incidence
Propagation mode
Shields parameters
Steady current
Influences of oxygen content on the carrier concentration and transport properties of Bi-2212 bulks
会议论文
OAI收割
OCT 24-26, 2011
作者:
Yang, Shenghui
;
Liu, Haiming
;
Zhang, Shengnan
;
Li, Chengshan
;
Hao, Qinbin
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2018/01/12
High Temperature Superconductors
Bi-2212
Spark Plasma Sintering
Carrier Concentration
Critical Current Density
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:
Wang Y.
;
Wang L.
;
Wang L.
;
Wang L.
;
Liu Y.
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2013/03/25
808nm high power diode lasers
which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems
have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers
and they could lead to new applications where space
weight and electrical power are critical. High efficiency devices generate less waste heat
which means less strain on the cooling system and more tolerance to thermal conductivity variation
a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s
1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars
we fabricate a 1 3 arrays
the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A
the slope efficiency is 3.37 W/A. 2008 SPIE.
Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE)
会议论文
OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Zhang Z.-W.
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  |  
浏览/下载:11/0
  |  
提交时间:2013/03/25
The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit
the luminous uniformity has great improved
but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED
such as low field effect mobility
low output current and threshold voltage shift. In this article
a two-a-Si:H TFT pixel circuit was designed
which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing
the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments
the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal
the variety of Vth
is smallest
about 1.28V after a fixed stressing time of 1.33104min
which shows the novel data signal timing can improved the driving TFT output-input current stability.