中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共5条,第1-5条 帮助

条数/页: 排序方式:
Natural lupeol level variation among castor accessions and the upregulation of lupeol synthesis in response to light 期刊论文  OAI收割
INDUSTRIAL CROPS AND PRODUCTS, 2023, 卷号: 192
作者:  
Li, Donghai;  Zaman, Wajid;  Lu, Jianjun;  Niu, Qingqing;  Zhang, Xuanhao
  |  收藏  |  浏览/下载:11/0  |  提交时间:2024/03/07
Performance and electron radiation damage of InAs/GaSb long-wave infrared detectors based on P pi MN design 期刊论文  OAI收割
JOURNAL OF APPLIED PHYSICS, 2021, 卷号: 130, 期号: 7, 页码: 75104
作者:  
Wei, Guoshuai;   Hao, Ruiting;   Li, Xiaoming;   Wang, Yunpeng;   Fang, Shuiliu;   Guo, Jie;   Ma, Xiaole;   Ren, Yang;   Li, Junbin;   Kong, JinCheng;   Wang, Guowei;   Xu, Yingqiang;   Wu, Donghai;   Niu, Zhichuan
  |  收藏  |  浏览/下载:34/0  |  提交时间:2022/04/28
Optimized design and fabrication of polymer/silica thermo-optic switch with low power consumption 期刊论文  OAI收割
Applied Optics, 2017, 卷号: 56, 期号: 21, 页码: 5799-5803
作者:  
DONGHAI NIU;  SHIQI SUN;  QIANG XU;  MINGHUI JIANG;  XIBIN WANG
收藏  |  浏览/下载:40/0  |  提交时间:2018/07/09
1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy 期刊论文  OAI收割
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 482-488
作者:  
Wu Donghai;  Han Qin;  Peng Hongling;  Niu Zhichuan
收藏  |  浏览/下载:21/0  |  提交时间:2010/11/23
Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes 期刊论文  OAI收割
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1860-1864
作者:  
Xu Yingqiang;  Yang Xiaohong;  Xu Yingqiang;  Han Qin;  Niu Zhichuan
收藏  |  浏览/下载:40/0  |  提交时间:2010/11/23