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	Design consideration and performance of high-power and high-brightness ingaas-ingaasp-algaas quantum-well diode lasers (lambda=0.98 mu m) 期刊论文 iSwitch采集 Ieee journal of selected topics in quantum electronics, 2000, 卷号: 6, 期号: 4, 页码: 577-584 作者: Yang, GW; Hwu, RJ; Xu, ZT; Ma, XY 收藏 \| 浏览/下载：11/0 \| 提交时间：2019/05/12 Quantum-well lasers Semiconductor diodes Semiconductor epitaxial layers Semiconductor lasers Semiconductor materials
	Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m) 期刊论文 OAI收割 ieee journal of selected topics in quantum electronics, 2000, 卷号: 6, 期号: 4, 页码: 577-584 Yang GW; Hwu RJ; Xu ZT; Ma XY 收藏 \| 浏览/下载：47/0 \| 提交时间：2010/08/12 quantum-well lasers semiconductor diodes semiconductor epitaxial layers semiconductor lasers semiconductor materials OPERATION SINGLE
	High-performance 980-nm quantum-well lasers using a hybrid material system of an al-free ingaas-ingaasp active region and algaas cladding layers grown by metal-organic chemical vapor deposition 期刊论文 iSwitch采集 Ieee journal of quantum electronics, 1999, 卷号: 35, 期号: 10, 页码: 1535-1541 作者: Yang, GW; Hwu, RJ; Xu, ZT; Ma, XY 收藏 \| 浏览/下载：19/0 \| 提交时间：2019/05/12 Quantum-well lasers Semiconductor diodes Semiconductor epitaxial layers Semiconductor lasers Semiconductor materials
	High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition 期刊论文 OAI收割 ieee journal of quantum electronics, 1999, 卷号: 35, 期号: 10, 页码: 1535-1541 Yang GW; Hwu RJ; Xu ZT; Ma XY 收藏 \| 浏览/下载：44/0 \| 提交时间：2010/08/12 quantum-well lasers semiconductor diodes semiconductor epitaxial layers semiconductor lasers semiconductor materials NM DIODE-LASERS WAVE-GUIDE AMPLIFIER FRONT-FACET POWER