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浏览/检索结果: 共77条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A Reliable Method for Removing Fabry-Perot Effect in Material Characterization with Terahertz Time-Domain Spectroscopy 期刊论文  OAI收割 IEEE Transactions on Terahertz Science and Technology, 2020, 卷号: 10, 期号: 5, 页码: 443-452 作者:  Liu DY(刘大有);  Lu TQ(卢天琪);  Qi F(祁峰)   |  收藏  |  浏览/下载：33/0  |  提交时间：2020/07/04 Terahertz  Material Characterization  Fabry-Perot effect  Time domain  Optical Thin Sample   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]   |  收藏  |  浏览/下载：118/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4 作者:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu)   |  收藏  |  浏览/下载：41/0  |  提交时间：2018/05/07 Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697 作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa)   |  收藏  |  浏览/下载：55/0  |  提交时间：2018/05/15 Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)   Down-regulation of EPAS1 Transcription and Genetic Adaptation of Tibetans to High-altitude Hypoxia 期刊论文  OAI收割 Molecular Biology and Evolution, 2017, 卷号: 34, 期号: 4, 页码: 818–830 作者:  Peng Y;  Cui CY;  Yang DY;  Zhang Q;  Bianbazhuoma 收藏  |  浏览/下载：94/0  |  提交时间：2017/01/19 Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9 作者:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi) 收藏  |  浏览/下载：38/0  |  提交时间：2016/12/12 silicon-on-insulator  ionizing radiation  hot carriers   A novel bio-inspired algorithm based on plant root growth model for data clustering 会议论文  OAI收割 35th Chinese Control Conference, CCC 2016, Chengdu, China, July 27-29, 2016 作者:  Qi XB(亓祥波);  Zhu YL(朱云龙);  Zhang H(张浩);  Zhang DY(张丁一);  Wu JW(吴俊伟) 收藏  |  浏览/下载：46/0  |  提交时间：2016/10/07 Artificial root mass optimization algorithm  genetic algorithm  particle swarm optimization algorithm   HMOX2 Functions as a Modifier Gene for High-Altitude Adaptation in Tibetans 期刊论文  OAI收割 HUMAN MUTATION, 2016, 卷号: 37, 期号: 2, 页码: 216-223 作者:  Yang DY;  Peng Y;  Ouzhuluobu;  Bianbazhuoma;  Cui CY 收藏  |  浏览/下载：34/0  |  提交时间：2015/12/11 HMOX2  Tibetans  high altitude  hemoglobin  adaptation   Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8 作者:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan)   |  收藏  |  浏览/下载：33/0  |  提交时间：2018/01/26 Reliability  Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor  Total Ionizing Dose Effect  Electrical Stress   Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8, 页码: 193-199 作者:  Wang, B (Wang Bo)   |  收藏  |  浏览/下载：36/0  |  提交时间：2018/01/26 Complementary Metal Oxide Semiconductor Active Pixel Sensor  Dark Signal  Proton Radiation  Displacement Effect