中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus 期刊论文  OAI收割
Physical Review B, 2017, 卷号: 96, 期号: 15
作者:  
Wang, D.;  D. Han;  X. B. Li;  N. K. Chen;  D. West
  |  收藏  |  浏览/下载:17/0  |  提交时间:2018/06/13
Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction 期刊论文  OAI收割
Journal of Physical Chemistry Letters, 2016, 卷号: 7, 期号: 18
作者:  
Han, D.;  J. Bang;  W. Y. Xie;  V. Meunier and S. B. Zhang
收藏  |  浏览/下载:13/0  |  提交时间:2017/09/11