机构

• 长春光学精密机械与物... [2]
• 武汉植物园 [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 会议论文 [2]
• 期刊论文 [2]

发表日期

• 2021 [1]
• 2019 [1]
• 2007 [1]
• 2005 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Observations of Forbush Decreases of Cosmic-Ray Electrons and Positrons with the Dark Matter Particle Explorer 期刊论文  OAI收割 ASTROPHYSICAL JOURNAL LETTERS, 2021, 卷号: 920, 期号: 2, 页码: 10 作者:  Alemanno, Francesca;  An, Qi;  Azzarello, Philipp;  Barbato, Felicia Carla Tiziana;  Bernardini, Paolo   |  收藏  |  浏览/下载：106/0  |  提交时间：2021/12/08 Solar coronal mass ejections  Forbush effect  Cosmic rays   Taxonomy of the order Bunyavirales: update 2019 期刊论文  OAI收割 ARCHIVES OF VIROLOGY, 2019, 卷号: 164, 期号: 7, 页码: 1949-1965 作者:  Abudurexiti, Abulikemu;  Adkins, Scott;  Alioto, Daniela;  Alkhovsky, Sergey V.;  Avsic-Zupanc, Tatjana   |  收藏  |  浏览/下载：64/0  |  提交时间：2019/10/17 Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25 Pulsed anodic oxidation technique  a new way of forming current blocking layers  was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer  which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.   High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.