中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共78条，第1-10条 帮助

条数/页： 排序方式：
1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文  OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2]
  |  收藏  |  浏览/下载：37/0  |  提交时间：2022/04/07
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1
  |  收藏  |  浏览/下载：41/0  |  提交时间：2021/08/06
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1
  |  收藏  |  浏览/下载：40/0  |  提交时间：2021/12/06
Ultra-broadband high conversion efficiency optical parametric chirped-pulse amplification based on YCOB crystals 期刊论文  OAI收割
OPTICS EXPRESS, 2020, 期号: 8, 页码: 11645
作者:  Yang, SH;  Liang, X;  Xie, XL;  Yang, QW;  Tu, XN
  |  收藏  |  浏览/下载：32/0  |  提交时间：2020/12/23
Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET 期刊论文  OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566
作者:  Liang, XW (Liang, Xiaowen)[ 1,2,3 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Yu, XF (Yu, Xuefeng)[ 1,2 ]
  |  收藏  |  浏览/下载：26/0  |  提交时间：2020/12/11
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs 期刊论文  OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:  Xi, SX (Xi, Shan-Xue)[ 1,2,3 ];  Zheng, QW (Zheng, Qi-Wen)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Cui, JW (Cui, Jiang-Wei)[ 1,2 ];  Wei, Y (Wei, Ying)[ 1,2 ]
  |  收藏  |  浏览/下载：23/0  |  提交时间：2020/07/06
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]
  |  收藏  |  浏览/下载：116/0  |  提交时间：2019/05/14
A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs 期刊论文  OAI收割
RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5
作者:  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zhou, H (Zhou, Hang)[ 1,2,3 ];  Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
  |  收藏  |  浏览/下载：9/0  |  提交时间：2020/03/20
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
作者:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu)
  |  收藏  |  浏览/下载：40/0  |  提交时间：2018/05/07
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文  OAI收割
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
作者:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang)
  |  收藏  |  浏览/下载：64/0  |  提交时间：2018/03/14