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	A composite hardness stamp in 184 PDMS for nanostructures transfer in high fidelity (EI CONFERENCE) 会议论文 OAI收割 2012 12th IEEE International Conference on Nanotechnology, NANO 2012, August 20, 2012 - August 23, 2012, Birmingham, United kingdom 作者: Du J.; Shi L.; Li S. 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/03/25 To improve the fidelity of nanostructures in transfer process a composite stamp with reasonable hardness distribution in 184 PDMS used to nanoimprint was studied. The stamp is composed of a stiff 184 PDMS structured layer and a soft 184 PDMS supporter layer. We studied the relationship between the hardness of the 184 PDMS and the proportion of each component in 184 PDMS. The appropriate components proportions of prepolymer and curing agent corresponding to the different region of the composite stamp were presented. The fabrication method of the stamp is also presented. Corresponding experiments were carried out by using this stamp. Kinds of nanostructures were transferred in one inch diameter area with good fidelity. The feature sizes of the structures were less than 100 nm. 2012 IEEE.
	Microscopic Study of Band Structures in Sr98-102 and Zr100-104 Isotopes 期刊论文 OAI收割 COMMUNICATIONS IN THEORETICAL PHYSICS, 2011, 卷号: 56, 期号: 5, 页码: 922-926 Dong, GX; Yu, SY; Liu, YX; Shen, CW 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/05/17 NEUTRON-RICH NUCLEI PROJECTED SHELL-MODEL HIGH-SPIN 100 REGION DEFORMATION PARTICLE ISOMERS
	Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique (EI CONFERENCE) 会议论文 OAI收割 ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang X.; Wang X.; Wang X.; Zheng X.; Gao J. 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/03/25 With reactive low voltage ion plating technique ITO (indium oxide doped with tin) films were deposited on glass substrates by using ITO pellet with a composition of 90 wt.% In2O3 and 10 wt.% SnO2 without extra heating. The post annealing process was done in vacuum with different annealing temperature at 100 200 300 and 400C for 2 hours respectively. The effects of vacuum annealing on structural optical and electrical properties of the ITO film deposited by RLVIP were studied in detail. The results showed that the crystalline of the film was improved with the higher temperature. The increase of the annealing temperature improved the infrared reflectivity from 30% to 80% over 8-14m of the infrared atmosphere window and a simultaneous variation in the optical transmission of the visible spectral region occurred. In addition sheet resistance of ITO films had contrary changing trend with the IR reflectance as well.
	An interface kinetics study of oxidation process of silicon 期刊论文 OAI收割 Integrated Ferroelectrics, 2005, 卷号: 74, 页码: 31-43 F. Fang; M. J. Ha; X. Y. Qiu; J. M. Liu 收藏 \| 浏览/下载：24/0 \| 提交时间：2012/04/14 oxidation kinetics transition region modeling thermal-oxidation oxide-films si(100) oxygen mechanism growth sio2