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	Portable microfluidic chip electrophoresis device with integrated Pt electrodes for the analysis of AgNPs 期刊论文 OAI收割 MICRO & NANO LETTERS, 2018, 卷号: 13, 期号: 3, 页码: 302-305 作者: Han, Haitao; Zheng, Zhaoxia; Pan, Dawei; Wang, Chenchen; Hu, Xueping \| 收藏 \| 浏览/下载：48/0 \| 提交时间：2018/04/20 Microfluidics Lab-on-a-chip Platinum Microelectrodes Nanoparticles Thin Films Voltammetry (Chemical Analysis) Electrophoresis Oxidation Portable Instruments Portable Microfluidic Chip Electrophoresis Device Integrated Platinum Thin Film Electrodes Agnps Analysis Su-8-pyrex Microfluidic Chip Electrophoresis Instrument Reusable Holder Electrochemical Oxidation Behaviours Lab-on-a-chip Platform Cyclic Voltammetry Running Buffer Separation Voltage Detection Potential Microfluidic Platform Silver Nanoparticle Analysis Voltage 0 2 v To 0 4 v Pt Ag
	Energy transfer in Y3Al5O12:Ce 3, Pr3+ and CaMoO4:Sm3, Eu 3 phosphors (EI CONFERENCE) 会议论文 OAI收割作者: Wang L.; Wang X.-J.; Zhang X.; Zhang X.; Zhang X. 收藏 \| 浏览/下载：39/0 \| 提交时间：2013/03/25 Non-radiative energy transfers (ET) from Ce3 to Pr3+ in Y3Al5O12:Ce3 Pr3+ and from Sm3 to Eu3 in CaMoO4:Sm3 Eu3 are studied based on photoluminescence spectroscopy and fluorescence decay patterns. The result indicates an electric dipoledipole interaction that governs ET in the LED phosphors. For Ce3 concentration of 0.01 in YAG:Ce3 Pr3+ the rate constant and critical distance are evaluated to be 4.510-36 cm 6 s-1 and 0.81 nm respectively. An increase in the red emission line of Pr3+ relative to the yellow emission band of Ce 3 on increasing Ce3 concentration is observed. This behavior is attributed to the increase of spectral overlap integrals between Ce3 emission and Pr3+ excitation due to the fact that the yellow band shifts to the red spectral side with increasing Ce3 concentration. In CaMoO4:Sm3 Eu3 Sm 3Eu3 transfer occurs from 4G5/2 of Sm3 to 5D0 of Eu3. The rate constant of 8.510-40 cm6 s-1 and the critical transfer distance of 0.89 nm are evaluated. 2010 Elsevier B.V. All rights reserved.
	Synthesis and luminescence properties of Eu3+-doped silicate nanomaterial (EI CONFERENCE) 会议论文 OAI收割 17th International Conference on Dynamical Processes in Excited States of Solids, DPC'10, June 20, 2010 - June 25, 2010, Argonne, IL, United states 作者: Zhang J.; Zhang J.; Zhang J. 收藏 \| 浏览/下载：33/0 \| 提交时间：2013/03/25 In this paper we introduce a sol-gel process for preparing Y 2Si2O7: Eu3+ nanocrystals. The rare earth compounds were dispersed in the SiO2 colloids and the monodisperse nano-scale composite materials were prepared. The reactant mass fraction and heat treatment temperatures could affect the structures and emission spectrum properties of as-synthesized samples. The samples emit the strong red light upon excitation under the ultraviolet. The main peaks originate from 5D0-7F2 electric dipole transition of Eu3+. With regard to the samples treated at different temperatures the emission spectra obtained under 266 nm excitation show different shapes of spectra lines and relative intensities indicating that the Eu3+ ions have been located in different local environments. 2011 Published by Elsevier B.V.
	Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation (EI CONFERENCE) 会议论文 OAI收割 Lu Y. M.; Liang H. W.; Shen D. Z.; Zhang Z. Z.; Zhang J. Y.; Zhao D. X.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：15/0 \| 提交时间：2013/03/25 In this paper highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (60 kW/cm2) PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2 a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-E x) scattering process from two ground state excitons where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2 3 4.... Under excitation density of 300 kW/cm 2 the stimulated emission originating from Ex-E x scattering is obtained. When the excitation density is above 580 kW/cm2 the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density. 2006 Elsevier B.V. All rights reserved.
	Selection rules for 4f2&rarr4f2 electric dipole transitions by considering mixing with 4f5d components of Pr3+ in SrAl12O19 (EI CONFERENCE) 会议论文 OAI收割作者: Wang X.-J.; Zhang J.-H. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 A set of selection rules is deduced for the 4f2 transitional levels that mix with explicit 4f5d components. Based on these selection rules the dipole-allowed transitions between the 4f2 crystal field levels are determined in Pr3+ doped SrAl12O19. Meanwhile the main 4f5d components mixed into 4f2 transitional levels are identified by determining the nonzero matrix elements of both the odd-rank crystal-field and the electric dipole operator. The selection rules have been applied to analyze the transitions from 1S0 and 3P0 to lower crystal field levels. 2006 Elsevier B.V. All rights reserved.
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：39/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.