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Optical limiting effects of cyano substituted distyrylbenzene derivatives 期刊论文  iSwitch采集
Dyes and pigments, 2016, 卷号: 134, 页码: 368-374
作者:  
Du, Juan;  Xie, Na;  Wang, Xiaodong;  Sun, Li;  Zhao, Yuxia
收藏  |  浏览/下载:38/0  |  提交时间:2019/05/09
Optical limiting property of a liquid malononitrile derivative on 800 nm laser pulses 期刊论文  iSwitch采集
Optical materials, 2016, 卷号: 58, 页码: 164-170
作者:  
Du, Juan;  Wang, Liuheng;  Xie, Na;  Sun, Li;  Wang, Xiaodong
收藏  |  浏览/下载:39/0  |  提交时间:2019/05/09
Poly(Acrylic Acid) Modification of Nd3+-Sensitized Upconversion Nanophosphors for Highly Efficient UCL Imaging and pH-Responsive Drug Delivery 期刊论文  OAI收割
advanced functional materials, 2015, 卷号: 25, 期号: 29, 页码: 4717-4729
作者:  
Liu,Bei;  Chen,Yinyin;  Li,Chunxia;  He,Fei;  Hou,Zhiyao
收藏  |  浏览/下载:51/0  |  提交时间:2016/04/29
Nanoscale patterns made by using a 13.5-nm Schwarzschild objective and a laser produced plasma source (EI CONFERENCE) 会议论文  OAI收割
Optical Micro- and Nanometrology IV, April 16, 2012 - April 18, 2012, Brussels, Belgium
作者:  
Wang X.;  Wang X.;  Wang X.;  Wang Z.;  Wang Z.
收藏  |  浏览/下载:37/0  |  提交时间:2013/03/25
Lithium fluoride (LiF) crystal is a very promising candidate as nanometer resolution EUV and soft X-ray detector. Compared with other EUV and soft X-ray detectors  charge coupled device and photographic films  LiF crystal has high resolution  large field of view and wide dynamic range. In this paper  using LiF crystal as EUV detector and a Schwarzschild objective (SO) working at 13.5nm as projection optics  mesh images with 4.2 m  1.2 m and 800 nm line width and pinhole patterns with 1.5m diameter are acquired in projection imaging mode and direct writing mode  respectively. Fluorescence intensity profiles of images show that the resolution of mesh image is 900 nm  and the one of pinhole image is 800 nm. In the experiments  a spherical condense mirror based on normal incidence type is used to eliminate the damage and contamination on the masks (mesh and pinhole) caused by the laser plasma  and the energy density is not decreased compared with that the masks are close to the plasma. The development of the SO  the alignment of the objective and the imaging experiments are also reported. 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).  
Micro assembled fourier transform spectrometer (EI CONFERENCE) 会议论文  OAI收割
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, November 19, 2008 - November 21, 2008, Chengdu, China
作者:  
Liang J.-Q.;  Zhang J.;  Zhang J.;  Zhang J.;  Wang B.
收藏  |  浏览/下载:28/0  |  提交时间:2013/03/25
With the trend of minimization of Fourier transform spectrometer (FTS) which is particularly pronounced in many applications  a model of a micro FTS with no moving parts is proposed and analyzed. During analyzng  the gradients which mainly introduce phase error are accounted. Based on these assumptions and the improved Mertz phase correcting method  the spectrum of signal is simulated with real extended light source. The resolution can be up to 3.43nm@800nm  with high signal-to-noise ratio (SNR) limiting resolving ability 6.8dB. In addition  the fabrication method of components are illuminated and demonstrated  which can not only make it bear some advantages over conventional micro dispersive spectrometers  but also afford some new concepts on the design of spectrometers with improved performance. 2009 SPIE.  
Ion beam sputter deposition of zirconia thin films (EI CONFERENCE) 会议论文  OAI收割
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China
作者:  
Liu L.;  Yang H.;  Liu L.
收藏  |  浏览/下载:19/0  |  提交时间:2013/03/25
We determined the optical constants (the refractive index n and the extinction coefficient k) of ion beam sputter deposited zirconia thin films with spectroscopic ellipsometry (SE). First  we obtained the structure information (the layer thickness  surface roughness and layer diffusion) by fitting the grazing x-ray reflection (GXRR) spectra. The fitted surface roughness is verified by atomic force micrometer (AFM) measurement. Second  based on the acquired structure information  the measured ellipsometry spectra are fitted in the range of 240-800nm at an incident angle of 70.25 degree. The optical constants are solved based on the Tauc-Lorentz dispersion. The optical band gap extracted by SE is 4.79eV. Finally  the optical band gap is verified by Taue plot method  which is well consistent with that of SE.  
Fabrication and electron emission of carbon microtubes (EI CONFERENCE) 会议论文  OAI收割
Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, July 10, 2005 - July 14, 2005, Oxford, United kingdom
作者:  
Liu L.;  Liu L.;  Wang W.;  Wang W.
收藏  |  浏览/下载:38/0  |  提交时间:2013/03/25
Carbon nanotubes have been attracting attention because of their unique physical properties and their application potential for field emission cathode. Carbon nanotubes possess the following properties favorable for field emission material  such as a high aspect ratio and sharp tip  high chemical stability  high mechanical strength  stable at high temperature. Some research works on carbon nanotubes field emitter and field emission display have been reported. Here  a kind of carbon microtubes and its field emission properties are introduced. They have some different properties with carbon nanotubes  and the density is lower than carbon nanotubes bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes are reported too. Carbon microtubes film is synthesized in liquid by electrolysis. The graphite plate is as anode  and n-silicon substrate with resistivity of 4-8 cm is as cathode. The electrolysis current is about 5-8mA/cm2  and applied voltage is 800-1500V. Temperatures of the methanol base solution is maintained at 60C in process of deposition of carbon microtubes. Carbon microtubes film is observed by scanning electron microscopy(SEM)  as shown in fig.1(a  b). The wall's thickness of carbon microtube is about 60nm. The diameter of carbon microtube is about 0.8 m. Raman spectrum of carbon microtubes film shows the two peaks at 1342and 1560cm-1. The field emission properties of carbon microtubes are measured in high vacuum chamber(10-5Pa). The emission area of carbon microtubes is 0.5cm 0.5cm. The threshold of field emission of the carbon microtubes film is about 3.6V/ m. Field emission property of carbon microtubes film is shown in fig.2. Another  when the electric field between anode and cathode is 10V/ m  the electric field distribution on single carbon microtube is also given after calculation according to electric field theory. Fig 3 shows that electric field distribution vertical section on the of single carbon microtube top with 2 m of highness. These results may help us to understand field emission properties of carbon microtubes. According to research results  it is found that liquidoid synthesis is simple method to produce carbon microtubes cold cathode material  and the carbon microtubes have better field emission properties. 2005 IEEE.  
High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.